Native-defect-controlled n-type conductivity in InN

R. E. Jones; S. X. Li; L. Hsu; K. M. Yu; W. Walukiewicz; Z. Liliental-Weber; J. W. Ager; E. E. Haller; H. Lu; W. J. Schaff

doi:10.1016/j.physb.2005.12.112

Native-defect-controlled n-type conductivity in InN

R. E. Jones, S. X. Li, L. Hsu, K. M. Yu, W. Walukiewicz, Z. Liliental-Weber, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff

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Research output: Contribution to journal › Conference article › peer-review

25 Scopus citations

Abstract

High-energy particle irradiation has been shown previously to be a method for n-type doping of InN. Here we irradiated InN with H⁺ and He ⁺ particles to study the dependence of the electron mobility on electron concentrations varying from mid-10¹⁸ to mid-10²⁰ cm^-3. We find that the electron mobility is limited by scattering from the ionized defects created by irradiation, resulting in a strong correlation between mobility and electron concentration. Furthermore, our calculations suggest that the radiation-induced defects may be triply charged donors.

Original language	English (US)
Pages (from-to)	436-439
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.112
State	Published - Apr 1 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005

Bibliographical note

Funding Information:
This work is supported by the Director's Innovation Initiative Program, National Reconnaissance Office, and by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering of the US Department of Energy under Contract no. DE-AC02-05CH11231. The work at Cornell University is funded by the Office of Naval Research under Contract no. N000149910936. R.E. Jones thanks the National Science Foundation for support through the Graduate Research Fellowship Program.

Keywords

InN
Mobility
Native defects
Radiation

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10.1016/j.physb.2005.12.112

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@article{bb3356cdbccc415690c3e7f384d0ae21,

title = "Native-defect-controlled n-type conductivity in InN",

abstract = "High-energy particle irradiation has been shown previously to be a method for n-type doping of InN. Here we irradiated InN with H+ and He + particles to study the dependence of the electron mobility on electron concentrations varying from mid-1018 to mid-1020 cm-3. We find that the electron mobility is limited by scattering from the ionized defects created by irradiation, resulting in a strong correlation between mobility and electron concentration. Furthermore, our calculations suggest that the radiation-induced defects may be triply charged donors.",

keywords = "InN, Mobility, Native defects, Radiation",

author = "Jones, {R. E.} and Li, {S. X.} and L. Hsu and Yu, {K. M.} and W. Walukiewicz and Z. Liliental-Weber and Ager, {J. W.} and Haller, {E. E.} and H. Lu and Schaff, {W. J.}",

note = "Funding Information: This work is supported by the Director's Innovation Initiative Program, National Reconnaissance Office, and by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering of the US Department of Energy under Contract no. DE-AC02-05CH11231. The work at Cornell University is funded by the Office of Naval Research under Contract no. N000149910936. R.E. Jones thanks the National Science Foundation for support through the Graduate Research Fellowship Program. ; Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.112",

language = "English (US)",

volume = "376-377",

pages = "436--439",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Native-defect-controlled n-type conductivity in InN

AU - Jones, R. E.

AU - Li, S. X.

AU - Hsu, L.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Liliental-Weber, Z.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Lu, H.

AU - Schaff, W. J.

N1 - Funding Information: This work is supported by the Director's Innovation Initiative Program, National Reconnaissance Office, and by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering of the US Department of Energy under Contract no. DE-AC02-05CH11231. The work at Cornell University is funded by the Office of Naval Research under Contract no. N000149910936. R.E. Jones thanks the National Science Foundation for support through the Graduate Research Fellowship Program.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - High-energy particle irradiation has been shown previously to be a method for n-type doping of InN. Here we irradiated InN with H+ and He + particles to study the dependence of the electron mobility on electron concentrations varying from mid-1018 to mid-1020 cm-3. We find that the electron mobility is limited by scattering from the ionized defects created by irradiation, resulting in a strong correlation between mobility and electron concentration. Furthermore, our calculations suggest that the radiation-induced defects may be triply charged donors.

AB - High-energy particle irradiation has been shown previously to be a method for n-type doping of InN. Here we irradiated InN with H+ and He + particles to study the dependence of the electron mobility on electron concentrations varying from mid-1018 to mid-1020 cm-3. We find that the electron mobility is limited by scattering from the ionized defects created by irradiation, resulting in a strong correlation between mobility and electron concentration. Furthermore, our calculations suggest that the radiation-induced defects may be triply charged donors.

KW - InN

KW - Mobility

KW - Native defects

KW - Radiation

UR - http://www.scopus.com/inward/record.url?scp=33645160394&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645160394&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.112

DO - 10.1016/j.physb.2005.12.112

M3 - Conference article

AN - SCOPUS:33645160394

SN - 0921-4526

VL - 376-377

SP - 436

EP - 439

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Native-defect-controlled n-type conductivity in InN

Abstract

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Keywords

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