High-energy particle irradiation has been shown previously to be a method for n-type doping of InN. Here we irradiated InN with H+ and He + particles to study the dependence of the electron mobility on electron concentrations varying from mid-1018 to mid-1020 cm-3. We find that the electron mobility is limited by scattering from the ionized defects created by irradiation, resulting in a strong correlation between mobility and electron concentration. Furthermore, our calculations suggest that the radiation-induced defects may be triply charged donors.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physica B: Condensed Matter|
|State||Published - Apr 1 2006|
|Event||Proceedings of the 23rd International Conference on Defects in Semiconductors - |
Duration: Jul 24 2005 → Jul 29 2005
Bibliographical noteFunding Information:
This work is supported by the Director's Innovation Initiative Program, National Reconnaissance Office, and by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering of the US Department of Energy under Contract no. DE-AC02-05CH11231. The work at Cornell University is funded by the Office of Naval Research under Contract no. N000149910936. R.E. Jones thanks the National Science Foundation for support through the Graduate Research Fellowship Program.
- Native defects