Nanoscale electronic devices based on transition metal dichalcogenides

Wenjuan Zhu, Tony Low, Han Wang, Peide Ye, Xiangfeng Duan

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)032004
Journal2D Materials
Volume6
Issue number3
DOIs
StatePublished - 2019

How much support was provided by MRSEC?

  • Partial

Reporting period for MRSEC

  • Period 6

Cite this

Nanoscale electronic devices based on transition metal dichalcogenides. / Zhu, Wenjuan; Low, Tony; Wang, Han; Ye, Peide; Duan, Xiangfeng.

In: 2D Materials, Vol. 6, No. 3, 2019, p. 032004.

Research output: Contribution to journalArticle

Zhu, Wenjuan ; Low, Tony ; Wang, Han ; Ye, Peide ; Duan, Xiangfeng. / Nanoscale electronic devices based on transition metal dichalcogenides. In: 2D Materials. 2019 ; Vol. 6, No. 3. pp. 032004.
@article{e23adc718e0849ddbc0e4a5e2035189c,
title = "Nanoscale electronic devices based on transition metal dichalcogenides",
author = "Wenjuan Zhu and Tony Low and Han Wang and Peide Ye and Xiangfeng Duan",
year = "2019",
doi = "10.1088/2053-1583/ab1ed9",
language = "English (US)",
volume = "6",
pages = "032004",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing Ltd.",
number = "3",

}

TY - JOUR

T1 - Nanoscale electronic devices based on transition metal dichalcogenides

AU - Zhu, Wenjuan

AU - Low, Tony

AU - Wang, Han

AU - Ye, Peide

AU - Duan, Xiangfeng

PY - 2019

Y1 - 2019

U2 - 10.1088/2053-1583/ab1ed9

DO - 10.1088/2053-1583/ab1ed9

M3 - Article

VL - 6

SP - 032004

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 3

ER -