Nanoscale electronic devices based on transition metal dichalcogenides

Wenjuan Zhu, Tony Low, Han Wang, Peide Ye, Xiangfeng Duan

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have very versatile chemical, electrical and optical properties. In particular, they exhibit rich and highly tunable electronic properties, with a bandgap that spans from semi-metallic up to 2 eV depending on the crystal phase, material composition, number of layers and even external stimulus. This paper provides an overview of the electronic devices and circuits based on 2D TMDs, such as Esaki diodes, resonant tunneling diodes (RTDs), logic and RF transistors, tunneling field-effect transistors (TFETs), static random access memories (SRAMs), dynamic RAM (DRAMs), flash memory, ferroelectric memories, resistitive memories and phase-change memories. We address the basic device principles, the advantages and limitations of these 2D electronic devices, and our perspectives on future developments.

Original languageEnglish (US)
Article number032004
Pages (from-to)032004
Journal2D Materials
Volume6
Issue number3
DOIs
StatePublished - 2019

Bibliographical note

Publisher Copyright:
© 2019 IOP Publishing Ltd.

How much support was provided by MRSEC?

  • Partial

Reporting period for MRSEC

  • Period 6

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