| Original language | English (US) |
|---|---|
| Pages (from-to) | 032004 |
| Journal | 2D Materials |
| Volume | 6 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2019 |
How much support was provided by MRSEC?
- Partial
Reporting period for MRSEC
- Period 6
Cite this
Zhu, W., Low, T., Wang, H., Ye, P., & Duan, X. (2019). Nanoscale electronic devices based on transition metal dichalcogenides. 2D Materials, 6(3), 032004. https://doi.org/10.1088/2053-1583/ab1ed9
Nanoscale electronic devices based on transition metal dichalcogenides. / Zhu, Wenjuan; Low, Tony; Wang, Han; Ye, Peide; Duan, Xiangfeng.
In: 2D Materials, Vol. 6, No. 3, 2019, p. 032004.Research output: Contribution to journal › Article
Zhu, W, Low, T, Wang, H, Ye, P & Duan, X 2019, 'Nanoscale electronic devices based on transition metal dichalcogenides', 2D Materials, vol. 6, no. 3, pp. 032004. https://doi.org/10.1088/2053-1583/ab1ed9
Zhu W, Low T, Wang H, Ye P, Duan X. Nanoscale electronic devices based on transition metal dichalcogenides. 2D Materials. 2019;6(3):032004. https://doi.org/10.1088/2053-1583/ab1ed9
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title = "Nanoscale electronic devices based on transition metal dichalcogenides",
author = "Wenjuan Zhu and Tony Low and Han Wang and Peide Ye and Xiangfeng Duan",
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T1 - Nanoscale electronic devices based on transition metal dichalcogenides
AU - Zhu, Wenjuan
AU - Low, Tony
AU - Wang, Han
AU - Ye, Peide
AU - Duan, Xiangfeng
PY - 2019
Y1 - 2019
U2 - 10.1088/2053-1583/ab1ed9
DO - 10.1088/2053-1583/ab1ed9
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SP - 032004
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
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