Abstract
Ferroelectrics have a spontaneous electric polarization that can be reversed by the application of an external electric field, while two-dimensional (2D) materials are crystalline solids consisting of one or few layer(s) of atoms. In ferroelectric/2D heterostructures, the ferroelectric materials can provide programmable and non-volatile doping in the 2D materials, while the atomically thin body in 2D materials enables strong electrostatic control over the channel by the polarized ferroelectric metal oxides. A wide range of nanoscale devices have been developed based on ferroelectric/2D hetero structures including high-performance nonvolatile memories, steep slope transistors, programmable junctions, charge and pressure sensors, and photodiodes [1]-[4]. In recent years, van der Waals (vdW) ferroelectrics emerged, which are 2D materials with intrinsic ferroelectric order. These vdW materials can retain ferroelectricity down to 1 unit-cell thickness, have tunable bandgap, and can be grown or transferred on any substrate [5]-[7], thus enabling a new series of optoelectronic and electromechanical devices. In this talk, we will discuss our recent work in developing reconfigurable, multifunction and analog devices based on ferroelectric/2D heterostructures and vdW ferroelectric materials [8]-[14].
Original language | English (US) |
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Title of host publication | 2022 Device Research Conference, DRC 2022 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781665498838 |
DOIs | |
State | Published - 2022 |
Event | 2022 Device Research Conference, DRC 2022 - Columbus, United States Duration: Jun 26 2022 → Jun 29 2022 |
Publication series
Name | Device Research Conference - Conference Digest, DRC |
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Volume | 2022-June |
ISSN (Print) | 1548-3770 |
Conference
Conference | 2022 Device Research Conference, DRC 2022 |
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Country/Territory | United States |
City | Columbus |
Period | 6/26/22 → 6/29/22 |
Bibliographical note
Funding Information:The authors would like to thank the support from Semiconductor Research Corporation (SRC) under grant SRC 2021-LM-3042 and National Science Foundation (NSF) under grant ECCS 16-53241 CAR.
Publisher Copyright:
© 2022 IEEE.