Abstract
A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.
Original language | English (US) |
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Article number | 187206 |
Journal | Physical review letters |
Volume | 95 |
Issue number | 18 |
DOIs | |
State | Published - Oct 28 2005 |