Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As

S. C. Masmanidis; H. X. Tang; E. B. Myers; Mo Li; K. De Greve; G. Vermeulen; W. Van Roy; M. L. Roukes

doi:10.1103/PhysRevLett.95.187206

Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As

S. C. Masmanidis, H. X. Tang, E. B. Myers, Mo Li, K. De Greve, G. Vermeulen, W. Van Roy, M. L. Roukes

Electrical and Computer Engineering

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Abstract

A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

Original language	English (US)
Article number	187206
Journal	Physical review letters
Volume	95
Issue number	18
DOIs	https://doi.org/10.1103/PhysRevLett.95.187206
State	Published - Oct 28 2005

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10.1103/PhysRevLett.95.187206

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abstract = "A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.",

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AU - Masmanidis, S. C.

AU - Tang, H. X.

AU - Myers, E. B.

AU - Li, Mo

AU - De Greve, K.

AU - Vermeulen, G.

AU - Van Roy, W.

AU - Roukes, M. L.

PY - 2005/10/28

Y1 - 2005/10/28

N2 - A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

AB - A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

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Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As

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