Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As

S. C. Masmanidis, H. X. Tang, E. B. Myers, Mo Li, K. De Greve, G. Vermeulen, W. Van Roy, M. L. Roukes

Research output: Contribution to journalArticlepeer-review

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Abstract

A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

Original languageEnglish (US)
Article number187206
JournalPhysical review letters
Volume95
Issue number18
DOIs
StatePublished - Oct 28 2005

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