Abstract
We report the fabrication of Al nanostructures using selective chemical vapor deposition (CVD) growth and an atomic hydrogen resist. A scanning tunneling microscope is used to pattern the hydrogen terminated surface by local removal of hydrogen atoms. The high selectivity of the CVD process limits Al growth to the uncovered regions. We demonstrate the fabrication of Al features as small as 2 nm.
Original language | English (US) |
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Pages (from-to) | 522-524 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 85 |
Issue number | 1 |
DOIs | |
State | Published - 1999 |
Bibliographical note
Copyright:Copyright 2005 Elsevier B.V., All rights reserved.