Nanolithography by selective chemical vapor deposition with an atomic hydrogen resist

Toshiyuki Mitsui, Eric Hill, Eric Ganz

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We report the fabrication of Al nanostructures using selective chemical vapor deposition (CVD) growth and an atomic hydrogen resist. A scanning tunneling microscope is used to pattern the hydrogen terminated surface by local removal of hydrogen atoms. The high selectivity of the CVD process limits Al growth to the uncovered regions. We demonstrate the fabrication of Al features as small as 2 nm.

Original languageEnglish (US)
Pages (from-to)522-524
Number of pages3
JournalJournal of Applied Physics
Volume85
Issue number1
DOIs
StatePublished - 1999

Bibliographical note

Copyright:
Copyright 2005 Elsevier B.V., All rights reserved.

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