TY - JOUR
T1 - Nanoindentation of silicate low-K dielectric thin films
AU - Vella, Joseph B.
AU - Volinsky, Alex A.
AU - Adhihetty, Indira S.
AU - Edwards, N. V.
AU - Gerberich, William W.
PY - 2002
Y1 - 2002
N2 - The capabilities of nanoindentation to characterize low-k organo silicate glass (OSG) thin films is explored as a relatively rapid and inexpensive metric of mechanical properties, adhesion strength, and fracture toughness. One method of decreasing the static dielectric constant of OSG interlayer dielectrics requires the introduction of porosity in the material which has a dramatic impact on its mechanical and toughness properties. Percolation theory is used to formulate a correlation between porosity and elastic modulus. Using cube corner diamond indentation and scratch testing fracture toughness calculations are also discussed.
AB - The capabilities of nanoindentation to characterize low-k organo silicate glass (OSG) thin films is explored as a relatively rapid and inexpensive metric of mechanical properties, adhesion strength, and fracture toughness. One method of decreasing the static dielectric constant of OSG interlayer dielectrics requires the introduction of porosity in the material which has a dramatic impact on its mechanical and toughness properties. Percolation theory is used to formulate a correlation between porosity and elastic modulus. Using cube corner diamond indentation and scratch testing fracture toughness calculations are also discussed.
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U2 - 10.1557/proc-716-b12.13
DO - 10.1557/proc-716-b12.13
M3 - Conference article
AN - SCOPUS:0036946546
SN - 0272-9172
VL - 716
SP - 619
EP - 624
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Silicon Materials - Processing, Characterization and Reliability
Y2 - 1 April 2002 through 5 April 2002
ER -