Nano CMOS device quantum simulation: Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET

Keyphrases

• Nanoscale CMOS 100%
• PMOSFET 100%
• CMOS Devices 100%
• Effective Mass 100%
• Triangular Well 100%
• Quantum Simulation 100%
• Band Effective Mass 66%
• Effective Mass Approximation 66%
• Device Modeling 33%
• Mass-based 33%
• Effective Field 33%
• Self-consistent Model 33%
• Six-band 33%
• Banding Techniques 33%
• Centroid 33%
• Computing Time 33%
• Inversion Layer 33%
• Hole Effective Mass 33%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Effective Mass Approximation 100%
• Electrostatic Force 100%
• Computing Time 50%
• Effective Field 50%

Physics

• Electrostatics 100%
• Field Effect Transistor 100%
• Quantum Simulation 100%