Nano CMOS device quantum simulation: Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET

An improved one-band self-consistent effective mass approximation (EMA) for hole quantization in p-MOSFET is presented. It is developed by extracting empirically a set of hole-effective masses based on the rigorous self-consistent six-band EMA. It is found that the self-consistent model using such improved one-band effective masses can provide accurate hole quantization characteristics. For further simplification, the triangular well approximation is also assessed. Fairly accurate MOS electrostatics is also obtained if introducing an effective field in the inversion layer in triangular well approximation. However, the triangular well approximation has its limitation in describing the hole centroid. In essence, the shorter computing time of the proposed improved one-band methods without sacrificing the accuracy of MOS electrostatics provides its potential in device modeling for hole quantization.