Nano CMOS device quantum simulation: Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFET

Tony Low, M. F. Li, Chen Shen, Yee Chia Yeo, Y. T. Hou, Chunxiang Zhu, Albert Chin, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

An improved one-band self-consistent effective mass approximation (EMA) for hole quantization in p-MOSFET is presented. It is developed by extracting empirically a set of hole-effective masses based on the rigorous self-consistent six-band EMA. It is found that the self-consistent model using such improved one-band effective masses can provide accurate hole quantization characteristics. For further simplification, the triangular well approximation is also assessed. Fairly accurate MOS electrostatics is also obtained if introducing an effective field in the inversion layer in triangular well approximation. However, the triangular well approximation has its limitation in describing the hole centroid. In essence, the shorter computing time of the proposed improved one-band methods without sacrificing the accuracy of MOS electrostatics provides its potential in device modeling for hole quantization.

Original languageEnglish (US)
Title of host publicationSelected Semiconductor Research
PublisherImperial College Press
Pages419-424
Number of pages6
ISBN (Electronic)9781848164079
ISBN (Print)9781848164062
DOIs
StatePublished - Jan 1 2011

Bibliographical note

Publisher Copyright:
© 2011 by Imperial College Press. All rights reserved.

Keywords

  • Hole quantization
  • Improved one-band
  • MOSFET
  • Self-consistent

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