N-channel single crystal Si nanoparticle schottky barrier transistor

Sang Ho Song, Yongping Ding, Ameya Bapat, Uwe Kortshagen, Stephen A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this work, we report n-channel Si nanoparticle Schottky barrier transistors with a vertical current flow structure. A YbSi x Schottky barrier junction was used as a source/drain junction to make electrons majority carriers in nanoparticle transistor since the nanoparticles were intrinsic. Si nanoparticles were generated by a plasma aerosol method and directly deposited on source patterns. A layer of SiO 2 was initially used as the gate insulator. This was deposited by PECVD and annealed at 500°C in O 2 producing a final thickness of approximately 2.5nm. In subsequent lots, this layer was replaced by HfO 2 to suppress short channel effects. The physical thickness of the HfO 2 was 4.5nm. The channel length of all devices was 15nm using a Cr metal gate. The Schottky barrier height of the YbSi x junction was 0.68 eV to p-type Si. The effective electrical thickness of the HfO 2 gate oxide is 1.45nm with leakage current of 0.2A/cm 2 at 2.0V. I D -V D characteristic of the initial lot show that majority carriers are electrons and that the channel carrier concentration is modulated by gate bias but it dose not saturated due to short channel effects and contact resistance.

Original languageEnglish (US)
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages201-204
Number of pages4
StatePublished - Aug 24 2007
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: May 20 2007May 24 2007

Publication series

Name2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Volume1

Other

Other2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
CountryUnited States
CitySanta Clara, CA
Period5/20/075/24/07

Keywords

  • Nanoparticle
  • Schottky barrier transistor
  • Vertical transistor
  • Ytterbium silicide

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    Song, S. H., Ding, Y., Bapat, A., Kortshagen, U., & Campbell, S. A. (2007). N-channel single crystal Si nanoparticle schottky barrier transistor. In 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings (pp. 201-204). (2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings; Vol. 1).