@inproceedings{4ad30614c18e4e66a302c1b7c7e9f70c,
title = "N-channel single crystal Si nanoparticle schottky barrier transistor",
abstract = "In this work, we report n-channel Si nanoparticle Schottky barrier transistors with a vertical current flow structure. A YbSix Schottky barrier junction was used as a source/drain junction to make electrons majority carriers in nanoparticle transistor since the nanoparticles were intrinsic. Si nanoparticles were generated by a plasma aerosol method and directly deposited on source patterns. A layer of SiO2 was initially used as the gate insulator. This was deposited by PECVD and annealed at 500°C in O 2 producing a final thickness of approximately 2.5nm. In subsequent lots, this layer was replaced by HfO2 to suppress short channel effects. The physical thickness of the HfO2 was 4.5nm. The channel length of all devices was 15nm using a Cr metal gate. The Schottky barrier height of the YbSix junction was 0.68 eV to p-type Si. The effective electrical thickness of the HfO2 gate oxide is 1.45nm with leakage current of 0.2A/cm2 at 2.0V. ID-VD characteristic of the initial lot show that majority carriers are electrons and that the channel carrier concentration is modulated by gate bias but it dose not saturated due to short channel effects and contact resistance.",
keywords = "Nanoparticle, Schottky barrier transistor, Vertical transistor, Ytterbium silicide",
author = "Song, {Sang Ho} and Yongping Ding and Ameya Bapat and Uwe Kortshagen and Campbell, {Stephen A.}",
year = "2007",
language = "English (US)",
isbn = "1420063421",
series = "2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings",
pages = "201--204",
booktitle = "2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings",
note = "2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 ; Conference date: 20-05-2007 Through 24-05-2007",
}