Multiscale simulation of loading and electrical resistance in silicon nanoindentation

G. S. Smith, E. B. Tadmor, Efthimios Kaxiras

Research output: Contribution to journalArticlepeer-review

110 Scopus citations

Abstract

Nanoindentation experiments are an excellent probe of micromechanical properties, but their interpretation is complicated by their multiscale nature. We report simulations of silicon nanoindentation, based on an extended version of the local quasicontinuum model, capable of handling complex Bravais crystals. Our simulations reproduce the experimental load vs displacement curves and provide microscopic information such as the distribution of transformed metallic phases of silicon underneath the indenter. This information is linked to the macroscopic electrical resistance, giving a satisfactory explanation of experimental results.

Original languageEnglish (US)
Pages (from-to)1260-1263
Number of pages4
JournalPhysical Review Letters
Volume84
Issue number6
DOIs
StatePublished - Jan 1 2000
Externally publishedYes

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