Extreme piezoresistivity was discovered in a silicone/nickel nanostrand (silicone/NiNs) nanocomposite. A novel technique was developed to study the charge transport phenomena responsible for the piezoresistive mechanism in the silicone/NiNs system using conductive nanoindentation. A quantum mechanical tunneling (QMT)/percolation model was developed, which bridges the gap between quantum effects at the nanoscopic scale and bulk material response at the macroscopic scale. The predictions of this model are compared to experimental measurements.
|Original language||English (US)|
|Number of pages||9|
|Journal||Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science|
|State||Published - Dec 2011|
Bibliographical noteFunding Information:
We are grateful to the joint DoD/DOE Munitions Technology Development Program for support of this work. This work was performed, in part, at the Center for Integrated Nanotechnologies (CINT), a United States Department of Energy, Office of Basic Energy Sciences, user facility at Los Alamos National Laboratory (LANL) (Contract No. DE-AC52-06NA25396) and Sandia National Laboratories (Contract No. DE-AC04-94AL85000). We also thank LANL and CINT for the use of their Nanoindenter XP system. We further thank Dr. Brent Adams for his encouragement of this work and Marshall Maez for fabrication of the test fixture hardware.