Transition metal dichalcogenides (TMDs) are interesting materials for electronic applications due to their layered crystal structure, which offers the potential to realize transistors with ultra-thin or even monolayer body thicknesses . Unlike single-layer graphene, TMDs typically have band gaps in the range of 1-2 eV, making them suitable for logic transistor applications . MoTe2 is an ideal material for p-MOSFETs due to its low electron affinity and relatively narrow band gap of ∼ 1 eV . MoTe2 is also of interest for realizing tunneling field effect transistors (TFETs) with highly-staggered or broken-gap band alignments , particularly when integrated with high electron affinity TMDs, such as SnSe2 . However, to date, only n-MOSFETs and ambipolar transistors have been demonstrated experimentally using thin-film MoTe2 [6, 7]. In this work, we report the characteristics of p-MOSFETs using exfoliated MoTe2 with Pd contact metallization. We characterize the properties of these backgated devices as a function of temperature and extract the Schottky barrier height of the Pd metallization. We also show that strong p-type doping occurs in these devices after prolonged exposure to ambient atmosphere, resulting in p-MOSFETs with linear contacts and drive current approaching 100 uA/um.