MOVPE of AlN and GaN by using novel precursors

Kwok Lun Ho; Klavs F. Jensen; Jen Wei Hwang; Wayne L. Gladfelter; John F. Evans

doi:10.1016/0022-0248(91)90489-R

MOVPE of AlN and GaN by using novel precursors

Kwok Lun Ho
, Klavs F. Jensen
, Jen Wei Hwang
, Wayne L. Gladfelter
, John F. Evans

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

The technique of low pressure MOVPE has been used to grow thin films of AlN and GaN on silicon and (0001) sapphire substrates using the single-source precursors diethylaluminum azide [Et₂AlN₃]₃ (DEAA) and diethygallium azide [Et₂GaN₃]₃ (DEGA). In-situ growth rate measurements have been performed for AlN growth on Si substrates. For comparison with conventional MOVPE growth, epitaxial films of Al_xGa_1-xN have also been deposited from triethylgallium (TEG), triethylaluminum (TEAl) and NH₃ under similar conditions. The properties of the grown films are discussed in terms of precursor selection and growth conditions.

Original language	English (US)
Pages (from-to)	376-380
Number of pages	5
Journal	Journal of Crystal Growth
Volume	107
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)90489-R
State	Published - Jan 1 1991

Bibliographical note

Funding Information:
This research was supported by a grant from the Materials Chemistry Initiative of the National Science Foundation (CHE-871 1821).

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10.1016/0022-0248(91)90489-R

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@article{cc4aa4a0cd6e4d4084dbe7e2d00f0fdd,

title = "MOVPE of AlN and GaN by using novel precursors",

abstract = "The technique of low pressure MOVPE has been used to grow thin films of AlN and GaN on silicon and (0001) sapphire substrates using the single-source precursors diethylaluminum azide [Et2AlN3]3 (DEAA) and diethygallium azide [Et2GaN3]3 (DEGA). In-situ growth rate measurements have been performed for AlN growth on Si substrates. For comparison with conventional MOVPE growth, epitaxial films of AlxGa1-xN have also been deposited from triethylgallium (TEG), triethylaluminum (TEAl) and NH3 under similar conditions. The properties of the grown films are discussed in terms of precursor selection and growth conditions.",

author = "Ho, \{Kwok Lun\} and Jensen, \{Klavs F.\} and Hwang, \{Jen Wei\} and Gladfelter, \{Wayne L.\} and Evans, \{John F.\}",

note = "Funding Information: This research was supported by a grant from the Materials Chemistry Initiative of the National Science Foundation (CHE-871 1821).",

year = "1991",

month = jan,

day = "1",

doi = "10.1016/0022-0248(91)90489-R",

language = "English (US)",

volume = "107",

pages = "376--380",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - MOVPE of AlN and GaN by using novel precursors

AU - Ho, Kwok Lun

AU - Jensen, Klavs F.

AU - Hwang, Jen Wei

AU - Gladfelter, Wayne L.

AU - Evans, John F.

N1 - Funding Information: This research was supported by a grant from the Materials Chemistry Initiative of the National Science Foundation (CHE-871 1821).

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The technique of low pressure MOVPE has been used to grow thin films of AlN and GaN on silicon and (0001) sapphire substrates using the single-source precursors diethylaluminum azide [Et2AlN3]3 (DEAA) and diethygallium azide [Et2GaN3]3 (DEGA). In-situ growth rate measurements have been performed for AlN growth on Si substrates. For comparison with conventional MOVPE growth, epitaxial films of AlxGa1-xN have also been deposited from triethylgallium (TEG), triethylaluminum (TEAl) and NH3 under similar conditions. The properties of the grown films are discussed in terms of precursor selection and growth conditions.

AB - The technique of low pressure MOVPE has been used to grow thin films of AlN and GaN on silicon and (0001) sapphire substrates using the single-source precursors diethylaluminum azide [Et2AlN3]3 (DEAA) and diethygallium azide [Et2GaN3]3 (DEGA). In-situ growth rate measurements have been performed for AlN growth on Si substrates. For comparison with conventional MOVPE growth, epitaxial films of AlxGa1-xN have also been deposited from triethylgallium (TEG), triethylaluminum (TEAl) and NH3 under similar conditions. The properties of the grown films are discussed in terms of precursor selection and growth conditions.

UR - https://www.scopus.com/pages/publications/0025838428

UR - https://www.scopus.com/pages/publications/0025838428#tab=citedBy

U2 - 10.1016/0022-0248(91)90489-R

DO - 10.1016/0022-0248(91)90489-R

M3 - Article

AN - SCOPUS:0025838428

SN - 0022-0248

VL - 107

SP - 376

EP - 380

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

MOVPE of AlN and GaN by using novel precursors

Abstract

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