MOVPE of AlN and GaN by using novel precursors

Kwok Lun Ho, Klavs F. Jensen, Jen Wei Hwang, Wayne L. Gladfelter, John F. Evans

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The technique of low pressure MOVPE has been used to grow thin films of AlN and GaN on silicon and (0001) sapphire substrates using the single-source precursors diethylaluminum azide [Et2AlN3]3 (DEAA) and diethygallium azide [Et2GaN3]3 (DEGA). In-situ growth rate measurements have been performed for AlN growth on Si substrates. For comparison with conventional MOVPE growth, epitaxial films of AlxGa1-xN have also been deposited from triethylgallium (TEG), triethylaluminum (TEAl) and NH3 under similar conditions. The properties of the grown films are discussed in terms of precursor selection and growth conditions.

Original languageEnglish (US)
Pages (from-to)376-380
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - Jan 1 1991

Bibliographical note

Funding Information:
This research was supported by a grant from the Materials Chemistry Initiative of the National Science Foundation (CHE-871 1821).


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