MOSFET transistors fabricated with high permitivity tio2 dielectrics

Stephen A. Campbell; David C. Gilmer; Xiao Chuan Wang; Ming Ta Hsieh; Hyeon Seag Kim; Wayne L. Gladfelter; Jinhua Yan

doi:10.1109/16.554800

MOSFET transistors fabricated with high permitivity tio₂ dielectrics

Stephen A. Campbell, David C. Gilmer, Xiao Chuan Wang, Ming Ta Hsieh, Hyeon Seag Kim, Wayne L. Gladfelter, Jinhua Yan

Chemistry (Twin Cities)

Research output: Contribution to journal › Article › peer-review

394 Scopus citations

Abstract

Layers of polycrystalline anatase TiO₂ have been deposited through the thermal decomposition of titanium tetrakisisopropoxide (TTIP). 500 A films deposited and annealed in oxygen at 750 °C had average roughnesses (R_a) of about 30 Å. Capacitors made from 190 A layers of TiCh displayed a voltage dependent accumulation capacitance. This was postulated to be caused by finite width effects in the accumulation layer which we have dubbed the quantum capacitance effect. TV-channel transistors made with these films showed near ideal behavior, but mobilities were significantly lower than those of thermal oxide MOSFET's. This mobility reduction was believed to be caused by interface states, which fell below 10¹¹ cm^-2 eV^-2 at midgap, but rose sharply on either side, unlike the U shaped behavior in thermal oxide MOSFET's.

Original language	English (US)
Pages (from-to)	104-109
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	44
Issue number	1
DOIs	https://doi.org/10.1109/16.554800
State	Published - 1997

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abstract = "Layers of polycrystalline anatase TiO2 have been deposited through the thermal decomposition of titanium tetrakisisopropoxide (TTIP). 500 A films deposited and annealed in oxygen at 750 °C had average roughnesses (Ra) of about 30 {\AA}. Capacitors made from 190 A layers of TiCh displayed a voltage dependent accumulation capacitance. This was postulated to be caused by finite width effects in the accumulation layer which we have dubbed the quantum capacitance effect. TV-channel transistors made with these films showed near ideal behavior, but mobilities were significantly lower than those of thermal oxide MOSFET's. This mobility reduction was believed to be caused by interface states, which fell below 1011 cm-2 eV-2 at midgap, but rose sharply on either side, unlike the U shaped behavior in thermal oxide MOSFET's.",

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AU - Campbell, Stephen A.

AU - Gilmer, David C.

AU - Wang, Xiao Chuan

AU - Hsieh, Ming Ta

AU - Kim, Hyeon Seag

AU - Gladfelter, Wayne L.

AU - Yan, Jinhua

PY - 1997

Y1 - 1997

N2 - Layers of polycrystalline anatase TiO2 have been deposited through the thermal decomposition of titanium tetrakisisopropoxide (TTIP). 500 A films deposited and annealed in oxygen at 750 °C had average roughnesses (Ra) of about 30 Å. Capacitors made from 190 A layers of TiCh displayed a voltage dependent accumulation capacitance. This was postulated to be caused by finite width effects in the accumulation layer which we have dubbed the quantum capacitance effect. TV-channel transistors made with these films showed near ideal behavior, but mobilities were significantly lower than those of thermal oxide MOSFET's. This mobility reduction was believed to be caused by interface states, which fell below 1011 cm-2 eV-2 at midgap, but rose sharply on either side, unlike the U shaped behavior in thermal oxide MOSFET's.

AB - Layers of polycrystalline anatase TiO2 have been deposited through the thermal decomposition of titanium tetrakisisopropoxide (TTIP). 500 A films deposited and annealed in oxygen at 750 °C had average roughnesses (Ra) of about 30 Å. Capacitors made from 190 A layers of TiCh displayed a voltage dependent accumulation capacitance. This was postulated to be caused by finite width effects in the accumulation layer which we have dubbed the quantum capacitance effect. TV-channel transistors made with these films showed near ideal behavior, but mobilities were significantly lower than those of thermal oxide MOSFET's. This mobility reduction was believed to be caused by interface states, which fell below 1011 cm-2 eV-2 at midgap, but rose sharply on either side, unlike the U shaped behavior in thermal oxide MOSFET's.

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MOSFET transistors fabricated with high permitivity tio₂ dielectrics

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