TY - GEN
T1 - MOSFET modeling for 45nm and beyond
AU - Cao, Yu
AU - McAndrew, Colin
PY - 2007
Y1 - 2007
N2 - Compact MOSFET models are a critical link between technology and design. The inexorable reduction in supply voltage and geometry to 45nm and below adds or emphasizes physical effects not important in the past, and so continues to expand the requirements for MOSFET models. At and below 45nm, process variations, reliability, proximity effects, high-k gate materials, and non-classical device structures all challenge modeling. This tutorial presents fundamentals and evolution of compact MOSFET models, and techniques to address the new challenges.
AB - Compact MOSFET models are a critical link between technology and design. The inexorable reduction in supply voltage and geometry to 45nm and below adds or emphasizes physical effects not important in the past, and so continues to expand the requirements for MOSFET models. At and below 45nm, process variations, reliability, proximity effects, high-k gate materials, and non-classical device structures all challenge modeling. This tutorial presents fundamentals and evolution of compact MOSFET models, and techniques to address the new challenges.
UR - https://www.scopus.com/pages/publications/50249137789
UR - https://www.scopus.com/pages/publications/50249137789#tab=citedBy
U2 - 10.1109/ICCAD.2007.4397337
DO - 10.1109/ICCAD.2007.4397337
M3 - Conference contribution
AN - SCOPUS:50249137789
SN - 1424413826
SN - 9781424413829
T3 - IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
SP - 638
EP - 643
BT - 2007 IEEE/ACM International Conference on Computer-Aided Design, ICCAD
T2 - 2007 IEEE/ACM International Conference on Computer-Aided Design, ICCAD
Y2 - 4 November 2007 through 8 November 2007
ER -