We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, AlxGa1-xN and InxGa1-xN. Calculations are made using a nonparabolic effective mass energy band model, Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steady-state velocity field curves and low field mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dependent mobility model is provided for both ternary compounds AlGaN and InGaN. The parameters for the low and high field mobility models for these ternary compounds are extracted and presented. The mobility models can be employed in simulations of devices that incorporate the ternary III-nitrides.
Bibliographical noteFunding Information:
Manuscript received April 1, 2000; revised October 30, 2000. The work at Georgia Tech was sponsored in part by the Office of Naval Research through Contract E21-K19, through Subcontract E21-K69 made to Georgia Tech from the Office of Naval Research MURI Program at UCSB, the National Science Foundation through Grant ECS-9811366, by the National Phosphor Center of Excellence through Contract E21-Z22, and by the Yamacraw Initiative. The work at the University of Minnesota was supported by the National Science Foundation through Grant ECS-9811366, by the Office of Naval Research and by the Minnesota Supercomputer Institute. The work at Politecnico di Torino was partially supported by CNR (National Research Council) through the MADESS II Project. The review of this paper was arranged by Editor U. Mishra. M. Farahmand is with Movaz Networks, Norcross, GA USA.
- Monte Carlo method
- Semiconductor materials
- Wide bandgap semiconductors