Monte Carlo calculation of electron transport properties of bulk AlN

J. D. Albrecht, R. P. Wang, P P Ruden, M. Farahmand, K. F. Brennan

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Abstract

The Monte Carlo method is used to simulate electron transport in bulk, wurtzite phase AlN using a three valley analytical band structure. Spherical, nonparabolic conduction band valleys at the Γ, K, and U symmetry points of the Brillouin zone are fitted to a first-principles band structure. The electron drift mobility is calculated as a function of temperature and ionized donor concentration in the ranges of 300-600 K and 1016- 1018 cm-3, respectively. The effect of compensation on ionized impurity scattering and the associated change in the mobility are considered. The simulated electron steady-state drift velocity and valley occupancy for electric fields up to 600 kV/cm are presented for 300, 450, and 600 K. Our calculations predict that AlN will exhibit a much smaller negative differential mobility effect than GaN, and that the drift velocity versus electric field curve will show a very broad peak.

Original languageEnglish (US)
Pages (from-to)1446-1449
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number3
DOIs
StatePublished - Feb 1 1998

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