Abstract
We present Monte Carlo based calculations of transport parameters useful in the simulation of III-nitride and SiC based devices. The calculations are performed using a full band ensemble Monte Carlo model that includes numerical formulations of the phonon scattering rates and impact ionization transition rates. Calculations are made for the wurtzite and zincblende phases of GaN, the wurtzite phase of InN, and the 3C (cubic) and 4H phases of SiC. The basic transport parameters determined are saturation drift velocity, and the ionization coefficients as a function of applied electric field. Results from the various materials are finally compared.
| Original language | English (US) |
|---|---|
| Pages (from-to) | T6241-T6246 |
| Journal | Materials Research Society Symposium-Proceedings |
| Volume | 622 |
| DOIs | |
| State | Published - 2000 |
Bibliographical note
Funding Information:This work was sponsored in part through a subcontract to Georgia Tech and the University of Minnesota from the Office of Naval Research MURI Program at UCSB and by the National Science Foundation through a joint contract to the University of Minnesota and Georgia Tech, ECS-9811366. The work at Georgia Tech was also supported by the Office of Naval Research through contract E21-K19, and by the Yamacraw initiative.