Monte Carlo based calculation of transport parameters for wide band gap device simulation

E. Bellotti, M. Farahmand, H. E. Nilsson, K. F. Brennan, P. P. Ruden

Research output: Contribution to journalArticle

Abstract

We present Monte Carlo based calculations of transport parameters useful in the simulation of III-nitride and SiC based devices. The calculations are performed using a full band ensemble Monte Carlo model that includes numerical formulations of the phonon scattering rates and impact ionization transition rates. Calculations are made for the wurtzite and zincblende phases of GaN, the wurtzite phase of InN, and the 3C (cubic) and 4H phases of SiC. The basic transport parameters determined are saturation drift velocity, and the ionization coefficients as a function of applied electric field. Results from the various materials are finally compared.

Original languageEnglish (US)
Pages (from-to)T6241-T6246
JournalMaterials Research Society Symposium-Proceedings
Volume622
StatePublished - Jan 1 2000

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    Bellotti, E., Farahmand, M., Nilsson, H. E., Brennan, K. F., & Ruden, P. P. (2000). Monte Carlo based calculation of transport parameters for wide band gap device simulation. Materials Research Society Symposium-Proceedings, 622, T6241-T6246.