Monolithic pixel sensors in deep-submicron SOI technology with analog and digital pixels

Marco Battaglia; Dario Bisello; Devis Contarato; Peter Denes; Piero Giubilato; Lindsay Glesener; Serena Mattiazzo; Chinh Vu

doi:10.1016/j.nima.2009.01.178

Monolithic pixel sensors in deep-submicron SOI technology with analog and digital pixels

Marco Battaglia
, Dario Bisello
, Devis Contarato
, Peter Denes
, Piero Giubilato
, Lindsay Glesener
, Serena Mattiazzo
, Chinh Vu

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 μ m SOI process, features both analog and digital pixels on a 10 μ m pitch. Results of tests performed with an infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.

Original language	English (US)
Pages (from-to)	380-384
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	604
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nima.2009.01.178
State	Published - Jun 1 2009

Bibliographical note

Funding Information:
This work was supported by the Director, Office of Science, of the US Department of Energy under Contract no. DE-AC02-05CH11231. We thank the staff of the LBNL Advanced Light Source and 88-in. Cyclotron for their assistance and for the excellent performance of the machines.

Keywords

CMOS technology
Monolithic pixel sensor
Particle detection
SOI

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10.1016/j.nima.2009.01.178

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Battaglia, M., Bisello, D., Contarato, D., Denes, P., Giubilato, P., Glesener, L., Mattiazzo, S., & Vu, C. (2009). Monolithic pixel sensors in deep-submicron SOI technology with analog and digital pixels. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 604(1-2), 380-384. https://doi.org/10.1016/j.nima.2009.01.178

Monolithic pixel sensors in deep-submicron SOI technology with analog and digital pixels. / Battaglia, Marco; Bisello, Dario; Contarato, Devis et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 604, No. 1-2, 01.06.2009, p. 380-384.

Research output: Contribution to journal › Article › peer-review

Battaglia, M, Bisello, D, Contarato, D, Denes, P, Giubilato, P, Glesener, L, Mattiazzo, S & Vu, C 2009, 'Monolithic pixel sensors in deep-submicron SOI technology with analog and digital pixels', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 604, no. 1-2, pp. 380-384. https://doi.org/10.1016/j.nima.2009.01.178

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AU - Glesener, Lindsay

AU - Mattiazzo, Serena

AU - Vu, Chinh

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AB - This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 μ m SOI process, features both analog and digital pixels on a 10 μ m pitch. Results of tests performed with an infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.

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Monolithic pixel sensors in deep-submicron SOI technology with analog and digital pixels

Abstract

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Keywords

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