Monolithic pixel sensors in deep-submicron SOI technology with analog and digital pixels

Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay Glesener, Serena Mattiazzo, Chinh Vu

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 μ m SOI process, features both analog and digital pixels on a 10 μ m pitch. Results of tests performed with an infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.

Original languageEnglish (US)
Pages (from-to)380-384
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1-2
StatePublished - Jun 1 2009

Bibliographical note

Funding Information:
This work was supported by the Director, Office of Science, of the US Department of Energy under Contract no. DE-AC02-05CH11231. We thank the staff of the LBNL Advanced Light Source and 88-in. Cyclotron for their assistance and for the excellent performance of the machines.


  • CMOS technology
  • Monolithic pixel sensor
  • Particle detection
  • SOI


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