Monolithic integration of nitride light emitting diodes and photodetectors for bi-directional optical communication

Zhenyu Jiang; Mahmoud R.M. Atalla; Guanjun You; Li Wang; Xiaoyun Li; Jie Liu; Asim M. Elahi; Lai Wei; Jian Xu

doi:10.1364/OL.39.005657

Monolithic integration of nitride light emitting diodes and photodetectors for bi-directional optical communication

Zhenyu Jiang, Mahmoud R.M. Atalla, Guanjun You, Li Wang, Xiaoyun Li, Jie Liu, Asim M. Elahi, Lai Wei, Jian Xu

Electrical and Computer Engineering

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Abstract

Design and fabrication of monolithically integrated III-nitride visible light-emitting-diodes (LEDs) and ultraviolet Schottky barrier-photodetectors (SB-PDs) have been proposed and demonstrated. Responsivity up to 0.2 AW^-1 at 365 nm for GaN SB-PDs has been achieved. It is shown that those UV SB-PDs were capable of sensitive UV light detection down to 7.16 × 10^-4 W/cm² at 365 nm, whereas simultaneous operation of on-chip blue LEDs has produced negligible crosstalk at practical illumination brightness. Monolithically integrated LEDs and SB-PDs can function as transmitters to emit visible light signals, and as receivers to analyze incoming UV signals, respectively; this offers the potential of using such devices for bi-directional optical wireless communication applications.

Original language	English (US)
Pages (from-to)	5657-5660
Number of pages	4
Journal	Optics Letters
Volume	39
Issue number	19
DOIs	https://doi.org/10.1364/OL.39.005657
State	Published - Oct 1 2014

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© 2014 Optical Society of America.

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abstract = "Design and fabrication of monolithically integrated III-nitride visible light-emitting-diodes (LEDs) and ultraviolet Schottky barrier-photodetectors (SB-PDs) have been proposed and demonstrated. Responsivity up to 0.2 AW-1 at 365 nm for GaN SB-PDs has been achieved. It is shown that those UV SB-PDs were capable of sensitive UV light detection down to 7.16 × 10-4 W/cm2 at 365 nm, whereas simultaneous operation of on-chip blue LEDs has produced negligible crosstalk at practical illumination brightness. Monolithically integrated LEDs and SB-PDs can function as transmitters to emit visible light signals, and as receivers to analyze incoming UV signals, respectively; this offers the potential of using such devices for bi-directional optical wireless communication applications.",

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AU - Jiang, Zhenyu

AU - Atalla, Mahmoud R.M.

AU - You, Guanjun

AU - Wang, Li

AU - Li, Xiaoyun

AU - Liu, Jie

AU - Elahi, Asim M.

AU - Wei, Lai

AU - Xu, Jian

PY - 2014/10/1

Y1 - 2014/10/1

N2 - Design and fabrication of monolithically integrated III-nitride visible light-emitting-diodes (LEDs) and ultraviolet Schottky barrier-photodetectors (SB-PDs) have been proposed and demonstrated. Responsivity up to 0.2 AW-1 at 365 nm for GaN SB-PDs has been achieved. It is shown that those UV SB-PDs were capable of sensitive UV light detection down to 7.16 × 10-4 W/cm2 at 365 nm, whereas simultaneous operation of on-chip blue LEDs has produced negligible crosstalk at practical illumination brightness. Monolithically integrated LEDs and SB-PDs can function as transmitters to emit visible light signals, and as receivers to analyze incoming UV signals, respectively; this offers the potential of using such devices for bi-directional optical wireless communication applications.

AB - Design and fabrication of monolithically integrated III-nitride visible light-emitting-diodes (LEDs) and ultraviolet Schottky barrier-photodetectors (SB-PDs) have been proposed and demonstrated. Responsivity up to 0.2 AW-1 at 365 nm for GaN SB-PDs has been achieved. It is shown that those UV SB-PDs were capable of sensitive UV light detection down to 7.16 × 10-4 W/cm2 at 365 nm, whereas simultaneous operation of on-chip blue LEDs has produced negligible crosstalk at practical illumination brightness. Monolithically integrated LEDs and SB-PDs can function as transmitters to emit visible light signals, and as receivers to analyze incoming UV signals, respectively; this offers the potential of using such devices for bi-directional optical wireless communication applications.

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Monolithic integration of nitride light emitting diodes and photodetectors for bi-directional optical communication

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