Monolithic fringe-field-activated crystalline silicon tilting-mirror devices

Dennis S. Greywall; Chien Shing Pai; Sang Hyun Oh; Chorng Ping Chang; Dan M. Marom; Paul A. Busch; Raymond A. Cirelli; J. Ashley Taylor; Fred P. Klemens; Thomas W. Sorsch; John Eric Bower; Warren Y.C. Lai; Hyongsok T. Soh

doi:10.1109/JMEMS.2003.818068

Monolithic fringe-field-activated crystalline silicon tilting-mirror devices

Dennis S. Greywall, Chien Shing Pai, Sang Hyun Oh, Chorng Ping Chang, Dan M. Marom, Paul A. Busch, Raymond A. Cirelli, J. Ashley Taylor, Fred P. Klemens, Thomas W. Sorsch, John Eric Bower, Warren Y.C. Lai, Hyongsok T. Soh

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

A new approach is presented for fabricating monolithic crystalline silicon tilting-mirror microoptoelectromechanical systems (MOEMS) devices. The activation electrodes, etched from a thick silicon layer deposited over insulating oxide onto the top surface of a silicon-on-insulator (SOI) wafer, are displaced from the mirrors and interact with these tilting elements via electrostatic fringing fields. In contrast to the more usual parallel-plate activation, the rotation angle saturates at high voltages. This paper discusses concept, design, and processing, and also compares modeling and measured performance of a specific 9° tilt range device array.

Original language	English (US)
Pages (from-to)	702-707
Number of pages	6
Journal	Journal of Microelectromechanical Systems
Volume	12
Issue number	5
DOIs	https://doi.org/10.1109/JMEMS.2003.818068
State	Published - Oct 2003

Keywords

MEMS
MOEMS
Micromachined structures
Optical telecommunications

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10.1109/JMEMS.2003.818068

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Greywall, D. S., Pai, C. S., Oh, S. H., Chang, C. P., Marom, D. M., Busch, P. A., Cirelli, R. A., Taylor, J. A., Klemens, F. P., Sorsch, T. W., Bower, J. E., Lai, W. Y. C., & Soh, H. T. (2003). Monolithic fringe-field-activated crystalline silicon tilting-mirror devices. Journal of Microelectromechanical Systems, 12(5), 702-707. https://doi.org/10.1109/JMEMS.2003.818068

@article{44e5abb9cc8a458e8ba16a9fac2d70a2,

title = "Monolithic fringe-field-activated crystalline silicon tilting-mirror devices",

abstract = "A new approach is presented for fabricating monolithic crystalline silicon tilting-mirror microoptoelectromechanical systems (MOEMS) devices. The activation electrodes, etched from a thick silicon layer deposited over insulating oxide onto the top surface of a silicon-on-insulator (SOI) wafer, are displaced from the mirrors and interact with these tilting elements via electrostatic fringing fields. In contrast to the more usual parallel-plate activation, the rotation angle saturates at high voltages. This paper discusses concept, design, and processing, and also compares modeling and measured performance of a specific 9° tilt range device array.",

keywords = "MEMS, MOEMS, Micromachined structures, Optical telecommunications",

author = "Greywall, {Dennis S.} and Pai, {Chien Shing} and Oh, {Sang Hyun} and Chang, {Chorng Ping} and Marom, {Dan M.} and Busch, {Paul A.} and Cirelli, {Raymond A.} and Taylor, {J. Ashley} and Klemens, {Fred P.} and Sorsch, {Thomas W.} and Bower, {John Eric} and Lai, {Warren Y.C.} and Soh, {Hyongsok T.}",

year = "2003",

month = oct,

doi = "10.1109/JMEMS.2003.818068",

language = "English (US)",

volume = "12",

pages = "702--707",

journal = "Journal of Microelectromechanical Systems",

issn = "1057-7157",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Monolithic fringe-field-activated crystalline silicon tilting-mirror devices

AU - Greywall, Dennis S.

AU - Pai, Chien Shing

AU - Oh, Sang Hyun

AU - Chang, Chorng Ping

AU - Marom, Dan M.

AU - Busch, Paul A.

AU - Cirelli, Raymond A.

AU - Taylor, J. Ashley

AU - Klemens, Fred P.

AU - Sorsch, Thomas W.

AU - Bower, John Eric

AU - Lai, Warren Y.C.

AU - Soh, Hyongsok T.

PY - 2003/10

Y1 - 2003/10

N2 - A new approach is presented for fabricating monolithic crystalline silicon tilting-mirror microoptoelectromechanical systems (MOEMS) devices. The activation electrodes, etched from a thick silicon layer deposited over insulating oxide onto the top surface of a silicon-on-insulator (SOI) wafer, are displaced from the mirrors and interact with these tilting elements via electrostatic fringing fields. In contrast to the more usual parallel-plate activation, the rotation angle saturates at high voltages. This paper discusses concept, design, and processing, and also compares modeling and measured performance of a specific 9° tilt range device array.

AB - A new approach is presented for fabricating monolithic crystalline silicon tilting-mirror microoptoelectromechanical systems (MOEMS) devices. The activation electrodes, etched from a thick silicon layer deposited over insulating oxide onto the top surface of a silicon-on-insulator (SOI) wafer, are displaced from the mirrors and interact with these tilting elements via electrostatic fringing fields. In contrast to the more usual parallel-plate activation, the rotation angle saturates at high voltages. This paper discusses concept, design, and processing, and also compares modeling and measured performance of a specific 9° tilt range device array.

KW - MEMS

KW - MOEMS

KW - Micromachined structures

KW - Optical telecommunications

UR - http://www.scopus.com/inward/record.url?scp=0242720769&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242720769&partnerID=8YFLogxK

U2 - 10.1109/JMEMS.2003.818068

DO - 10.1109/JMEMS.2003.818068

M3 - Article

AN - SCOPUS:0242720769

SN - 1057-7157

VL - 12

SP - 702

EP - 707

JO - Journal of Microelectromechanical Systems

JF - Journal of Microelectromechanical Systems

IS - 5

ER -

Monolithic fringe-field-activated crystalline silicon tilting-mirror devices

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