TY - JOUR
T1 - Molecular tunnel junctions based on mixed SAMs
T2 - exponential correlation of the average metal-HOMO coupling with SAM/metal work function
AU - Jeong, Gookyeong
AU - Frisbie, C. Daniel
N1 - Publisher Copyright:
© 2025 The Royal Society of Chemistry.
PY - 2025/3/18
Y1 - 2025/3/18
N2 - We report the transport characteristics of molecular tunnel junctions based on binary mixed self-assembled monolayers (SAMs) of aromatic molecules using the conducting probe atomic force microscopy platform. The molecules include terphenyl dithiol and two derivatives, 2′,3′,5′,6′-tetrafluoroterphenyl dithiol and 4,4′-(bicyclo[2.2.2]octane-1,4-diyl)dibenzenethiol, whose junction conductances differ from terphenyl dithiol by factors of 10 and 100, respectively. The junction conductance G varies exponentially with binary SAM composition, not linearly, as might be expected. By employing an analytical model for the off-resonant current-voltage (I-V) behavior, we extract the average electronic density of state parameters for junctions with Au tip and substrate contacts as a function of binary SAM composition. The average HOMO to Fermi level offset ϵh is weakly dependent on SAM composition, reflecting commonly observed HOMO level pinning. In stark contrast, and in correspondence with the conductance results, the average metal-HOMO coupling Γ depends exponentially on composition, not linearly as simple composition-based averaging predicts. On the other hand, Kelvin probe measurements of binary mixed SAM-metal work functions reveal that work function (or work function change ΔΦ) varies linearly with SAM composition; it is a simple sum of the single component SAM work functions weighted by their relative surface coverages. Thus, G and Γ are both exponentially correlated with ΔΦ; variation of ΔΦ by 360 meV (∼7%) tunes G by >100× and Γ by a factor of 10, with smaller work functions (and larger ΔΦ values) leading to larger G and Γ values. Qualitatively, a correlation between Γ and ΔΦ, which both reflect interfacial charge transfer, appears reasonable, but a fundamental understanding requires a first principles model that can also account for the simultaneous pinning of ϵh.
AB - We report the transport characteristics of molecular tunnel junctions based on binary mixed self-assembled monolayers (SAMs) of aromatic molecules using the conducting probe atomic force microscopy platform. The molecules include terphenyl dithiol and two derivatives, 2′,3′,5′,6′-tetrafluoroterphenyl dithiol and 4,4′-(bicyclo[2.2.2]octane-1,4-diyl)dibenzenethiol, whose junction conductances differ from terphenyl dithiol by factors of 10 and 100, respectively. The junction conductance G varies exponentially with binary SAM composition, not linearly, as might be expected. By employing an analytical model for the off-resonant current-voltage (I-V) behavior, we extract the average electronic density of state parameters for junctions with Au tip and substrate contacts as a function of binary SAM composition. The average HOMO to Fermi level offset ϵh is weakly dependent on SAM composition, reflecting commonly observed HOMO level pinning. In stark contrast, and in correspondence with the conductance results, the average metal-HOMO coupling Γ depends exponentially on composition, not linearly as simple composition-based averaging predicts. On the other hand, Kelvin probe measurements of binary mixed SAM-metal work functions reveal that work function (or work function change ΔΦ) varies linearly with SAM composition; it is a simple sum of the single component SAM work functions weighted by their relative surface coverages. Thus, G and Γ are both exponentially correlated with ΔΦ; variation of ΔΦ by 360 meV (∼7%) tunes G by >100× and Γ by a factor of 10, with smaller work functions (and larger ΔΦ values) leading to larger G and Γ values. Qualitatively, a correlation between Γ and ΔΦ, which both reflect interfacial charge transfer, appears reasonable, but a fundamental understanding requires a first principles model that can also account for the simultaneous pinning of ϵh.
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U2 - 10.1039/d5nr00487j
DO - 10.1039/d5nr00487j
M3 - Article
C2 - 40099713
AN - SCOPUS:105000272405
SN - 2040-3364
VL - 17
SP - 8912
EP - 8922
JO - Nanoscale
JF - Nanoscale
IS - 14
ER -