Abstract
Cobalt arsenide and phosphide thin films were prepared by organometallic chemical vapour deposition (OMCVD) at deposition temperatures between 300 and 500°C in a hot-wall reactor using a two-source method and a single-source method. The combination of tricarbonylnitrosylcobalt (-I) and di-t-butylphosphine or di-t-butylarsine was employed as a two-source method. The known hexacarbonyldicobalt clusters, CO2 (CO)6(μ-E2) (E = P, As), and the substituted dicarbonylnitrosylcobalt complexes, Co(CO)2 [E(tBu)2H](NO) (E = P, As), were used as a single source precursors. Auger electron spectroscopy indicated that the Co : P and Co : As ratios in most of the films were near unity with only a small amount of impurities such as carbon and oxygen. Electrical resistivity of the films at room temperature ranged from 450 to 1140 μΩ-cm for cobalt phosphide and 115 to 1140 μΩ-cm for cobalt arsenide. X-ray diffraction analysis revealed that cobalt arsenide films were polycrystalline, whereas cobalt phosphide films ranged from amorphous to polycrystalline. The grain size of the films ranged from 150 to 2000 Å measured by field-emission scanning electron microscopy. The film growth rate ranged from 4 to 30 Å min-1, for the single source methods and 150 to 330 Å min-1, for the two-source methods.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1159-1167 |
| Number of pages | 9 |
| Journal | Polyhedron |
| Volume | 13 |
| Issue number | 8 |
| DOIs | |
| State | Published - Apr 1994 |
Bibliographical note
Funding Information:AcknowlecrTqements-This researchw as funded by the Centerf or Interfacial Engineering,a n NSF Engineering ResearchC enter,a nd the GraduateS chool of the Uni-versityo f Minnesota.W e would like to thank Chris D. Frethem, Departmento f Cell Biology and Neuroanatomy, University of Minnesota, for his assistancein obtainingf ield-emissions canninge lectronm icrographs.
