The interactions of small thermal and energetic silicon clusters with crystalline and amorphous silicon surfaces observed in various plasmas were studied using molecular dynamics. Hydrogenated amorphous silicon film growth rates were obtained by employing a unit reaction probability for clusters of different sizes on silicon surfaces. Results showed that the clusters react with surface of amorphous silicon films and crystalline surfaces with high probability. The energetics and structures of adsorbed cluster configurations on these surfaces were also analyzed.
|Original language||English (US)|
|Number of pages||11|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jan 1 2001|
|Event||13th International Vaccum Microelectronics Conference - Guangzhou, China|
Duration: Aug 14 2000 → Aug 17 2000