TY - JOUR
T1 - Molecular beam mass spectrometry system for characterization of thermal plasma chemical vapor deposition
AU - Park, Soonam
AU - Liao, Feng
AU - Larson, John M.
AU - Girshick, Steven L.
AU - Zachariah, Michael R.
PY - 2004/9/1
Y1 - 2004/9/1
N2 - A molecular beam mass spectrometry system for in situ measurement of the concentration of gas phase species including radicals impinging on a substrate during thermal plasma chemical vapor deposition (TPCVD) has been designed and constructed. Dynamically controlled substrate temperature was achieved using a variable thermal contact resistance method via a backside flow of an argon/helium mixture. A high quality molecular beam with beam-to-background signal greater than 20 was obtained under film growth conditions by sampling through a small nozzle (75 μm) in the center of the. substrate. Mass discrimination effects were accounted for in order to quantify the species measurements. We demonstrate that this system has a minimum detection limit of under 100 ppb. Quantitative measurements of hydrocarbon species (H, H 2, C, CH3, CH4, C2H2, C2H4) using Ar/H2/ CH4 mixtures and silicon species (Si, SiH, SiH2, SiCl. SiCl2, Cl, HCl) using Ar/ H2/SiCl4 mixtures were obtained under thermal plasma chemical vapor deposition conditions.
AB - A molecular beam mass spectrometry system for in situ measurement of the concentration of gas phase species including radicals impinging on a substrate during thermal plasma chemical vapor deposition (TPCVD) has been designed and constructed. Dynamically controlled substrate temperature was achieved using a variable thermal contact resistance method via a backside flow of an argon/helium mixture. A high quality molecular beam with beam-to-background signal greater than 20 was obtained under film growth conditions by sampling through a small nozzle (75 μm) in the center of the. substrate. Mass discrimination effects were accounted for in order to quantify the species measurements. We demonstrate that this system has a minimum detection limit of under 100 ppb. Quantitative measurements of hydrocarbon species (H, H 2, C, CH3, CH4, C2H2, C2H4) using Ar/H2/ CH4 mixtures and silicon species (Si, SiH, SiH2, SiCl. SiCl2, Cl, HCl) using Ar/ H2/SiCl4 mixtures were obtained under thermal plasma chemical vapor deposition conditions.
KW - Chemical vapor deposition
KW - Mass spectrometry
KW - Thermal plasma
UR - http://www.scopus.com/inward/record.url?scp=12344295271&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=12344295271&partnerID=8YFLogxK
U2 - 10.1007/s11090-004-2273-1
DO - 10.1007/s11090-004-2273-1
M3 - Article
AN - SCOPUS:12344295271
SN - 0272-4324
VL - 24
SP - 353
EP - 372
JO - Plasmas and Polymers
JF - Plasmas and Polymers
IS - 3
ER -