Molecular beam mass spectrometry system for characterization of thermal plasma chemical vapor deposition

Soonam Park, Feng Liao, John M. Larson, Steven L. Girshick, Michael R. Zachariah

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A molecular beam mass spectrometry system for in situ measurement of the concentration of gas phase species including radicals impinging on a substrate during thermal plasma chemical vapor deposition (TPCVD) has been designed and constructed. Dynamically controlled substrate temperature was achieved using a variable thermal contact resistance method via a backside flow of an argon/helium mixture. A high quality molecular beam with beam-to-background signal greater than 20 was obtained under film growth conditions by sampling through a small nozzle (75 μm) in the center of the. substrate. Mass discrimination effects were accounted for in order to quantify the species measurements. We demonstrate that this system has a minimum detection limit of under 100 ppb. Quantitative measurements of hydrocarbon species (H, H 2, C, CH3, CH4, C2H2, C2H4) using Ar/H2/ CH4 mixtures and silicon species (Si, SiH, SiH2, SiCl. SiCl2, Cl, HCl) using Ar/ H2/SiCl4 mixtures were obtained under thermal plasma chemical vapor deposition conditions.

Original languageEnglish (US)
Pages (from-to)353-372
Number of pages20
JournalPlasma Chemistry and Plasma Processing
Volume24
Issue number3
DOIs
StatePublished - Sep 1 2004

Keywords

  • Chemical vapor deposition
  • Mass spectrometry
  • Thermal plasma

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