Molecular beam epitaxy growth of SnO2 using a tin chemical precursor

Tianqi Wang, Abhinav Prakash, Ellis Warner, Wayne L. Gladfelter, Bharat Jalan

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The authors report on the development of a molecular beam epitaxy approach for atomic layer controlled growth of phase-pure, single-crystalline epitaxial SnO2 films with scalable growth rates using a highly volatile precursor (tetraethyltin) for tin and rf-oxygen plasma for oxygen. Smooth, epitaxial SnO2 (101) films on r-sapphire (10 1 ¯ 2) substrates were grown as a function of tin precursor flux and substrate temperatures between 300 and 900°C. Three distinct growth regimes were identified where SnO2 films grew in a reaction-, flux-, and desorption-limited mode, respectively, with increasing substrate temperature. In particular, with increasing tin flux, the growth rates were found to increase and then saturate indicating any excess tin precursor desorbs above a critical beam equivalent pressure of tin precursor. Important implications of growth kinetic behaviors on the self-regulating stoichiometric growth of perovskite stannates are discussed.

Original languageEnglish (US)
Article number020606
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
StatePublished - Mar 1 2015

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© 2015 American Vacuum Society.

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