Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni2MnGa on (001) GaAs

J. W. Dong; L. C. Chen; C. J. Palmstrøm; R. D. James; S. McKernan

doi:10.1063/1.125009

Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni₂MnGa on (001) GaAs

J. W. Dong, L. C. Chen, C. J. Palmstrøm, R. D. James, S. McKernan

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Abstract

The exceptionally large magnetoresistance of the ferromagnetic shape memory alloy Ni₂MnGa makes thin films of this material promising candidates for applications in microelectromechanical systems. The growth of such films by on (001) GaAs substrates by molecular beam epitaxy was investigated. In situ RHEED, ex situ X-ray diffraction and TEM selective area electron diffraction show that the grown films are single crystals of a pseudomorphic tetragonal phase. The ferromagnetic nature of the films was confirmed by both vibrating sample and SQUID magnetometry, demonstrating a Curie temperature around 320 K.

Original language	English (US)
Pages (from-to)	1443-1445
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	10
DOIs	https://doi.org/10.1063/1.125009
State	Published - Sep 6 1999

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abstract = "The exceptionally large magnetoresistance of the ferromagnetic shape memory alloy Ni2MnGa makes thin films of this material promising candidates for applications in microelectromechanical systems. The growth of such films by on (001) GaAs substrates by molecular beam epitaxy was investigated. In situ RHEED, ex situ X-ray diffraction and TEM selective area electron diffraction show that the grown films are single crystals of a pseudomorphic tetragonal phase. The ferromagnetic nature of the films was confirmed by both vibrating sample and SQUID magnetometry, demonstrating a Curie temperature around 320 K.",

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AU - Dong, J. W.

AU - Chen, L. C.

AU - Palmstrøm, C. J.

AU - James, R. D.

AU - McKernan, S.

PY - 1999/9/6

Y1 - 1999/9/6

N2 - The exceptionally large magnetoresistance of the ferromagnetic shape memory alloy Ni2MnGa makes thin films of this material promising candidates for applications in microelectromechanical systems. The growth of such films by on (001) GaAs substrates by molecular beam epitaxy was investigated. In situ RHEED, ex situ X-ray diffraction and TEM selective area electron diffraction show that the grown films are single crystals of a pseudomorphic tetragonal phase. The ferromagnetic nature of the films was confirmed by both vibrating sample and SQUID magnetometry, demonstrating a Curie temperature around 320 K.

AB - The exceptionally large magnetoresistance of the ferromagnetic shape memory alloy Ni2MnGa makes thin films of this material promising candidates for applications in microelectromechanical systems. The growth of such films by on (001) GaAs substrates by molecular beam epitaxy was investigated. In situ RHEED, ex situ X-ray diffraction and TEM selective area electron diffraction show that the grown films are single crystals of a pseudomorphic tetragonal phase. The ferromagnetic nature of the films was confirmed by both vibrating sample and SQUID magnetometry, demonstrating a Curie temperature around 320 K.

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Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni₂MnGa on (001) GaAs

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