A molecular beam epitaxy growth monitoring method is developed for distributed Bragg reflectors and vertical-cavity surface-emitting laser (VCSEL) resonators. The wavelength of the substrate thermal emission that corresponds to the optical cavity resonant wavelength is selected by a monochromator and monitored during growth. This method allows VCSEL cavities of arbitrary design wavelength to be grown with a single control program. This letter also presents a theoretical model for the technique which is based on transmission matrices and simple thermal emission properties. Demonstrated reproducibility of the method is well within 0.1%.
|Original language||English (US)|
|Number of pages||1|
|Journal||Applied Physics Letters|
|State||Published - 1995|
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