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The ability to synthesize new materials with unique functionalities has provided the foundation for modern electronics and for new discoveries. Oxide molecular beam epitaxy (MBE) has played a vital role in this endeavor. In this chapter, key fundamental concepts discussing the physics of complex oxides, followed by the important role of oxide MBE, are presented. Recent technical advances, current and potential challenges, and advantages of an oxide MBE are reviewed. Important factors responsible for electronic‐quality oxide films – including of those metals that are difficult to oxidize – are discussed, with particular emphasis on new developments with radical‐based MBE approaches. Taking analogy from III–V MBE, the current status and future prospects of oxide MBE are discussed in developing oxide electronics operating at room temperature.
|Original language||English (US)|
|Title of host publication||Molecular Beam Epitaxy|
|Subtitle of host publication||Materials and Applications for Electronics and Optoelectronics|
|Number of pages||30|
|State||Published - Jan 1 2019|
Bibliographical notePublisher Copyright:
© 2019 John Wiley & Sons Ltd. Published 2019 by John Wiley & Sons Ltd.
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