Molecular beam epitaxy for oxide electronics

Abhinav Prakash, Bharat Jalan

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Scopus citations

Abstract

The ability to synthesize new materials with unique functionalities has provided the foundation for modern electronics and for new discoveries. Oxide molecular beam epitaxy (MBE) has played a vital role in this endeavor. In this chapter, key fundamental concepts discussing the physics of complex oxides, followed by the important role of oxide MBE, are presented. Recent technical advances, current and potential challenges, and advantages of an oxide MBE are reviewed. Important factors responsible for electronic‐quality oxide films – including of those metals that are difficult to oxidize – are discussed, with particular emphasis on new developments with radical‐based MBE approaches. Taking analogy from III–V MBE, the current status and future prospects of oxide MBE are discussed in developing oxide electronics operating at room temperature.

Original languageEnglish (US)
Title of host publicationMolecular Beam Epitaxy
Subtitle of host publicationMaterials and Applications for Electronics and Optoelectronics
PublisherWiley
Pages423-452
Number of pages30
ISBN (Electronic)9781119354987
ISBN (Print)9781119355021
DOIs
StatePublished - Jan 1 2019

Bibliographical note

Publisher Copyright:
© 2019 John Wiley & Sons Ltd. Published 2019 by John Wiley & Sons Ltd.

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