Abstract
Within-die spatial correlation of device parameter values caused by manufacturing variations has a significant impact on circuit performance. Based on experimental and simulation results, we: (1) characterize the spatial correlation of gate length over a full-field range of horizontal and vertical separation; (2) develop a rudimentary spatial correlation model; and (3) investigate its impact an the variability of circuit performance.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings - 6th International Symposium on Quality Electronic Design, ISQED 2005 |
| Pages | 516-521 |
| Number of pages | 6 |
| DOIs | |
| State | Published - 2005 |
| Externally published | Yes |
| Event | 6th International Symposium on Quality Electronic Design, ISQED 2005 - San Jose, CA, United States Duration: Mar 21 2005 → Mar 23 2005 |
Publication series
| Name | Proceedings - International Symposium on Quality Electronic Design, ISQED |
|---|---|
| ISSN (Print) | 1948-3287 |
| ISSN (Electronic) | 1948-3295 |
Other
| Other | 6th International Symposium on Quality Electronic Design, ISQED 2005 |
|---|---|
| Country/Territory | United States |
| City | San Jose, CA |
| Period | 3/21/05 → 3/23/05 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 9 Industry, Innovation, and Infrastructure
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