Keyphrases
MOSFET
100%
Surface Roughness
100%
Germanium
100%
Ultra-thin Body
100%
H-surfaces
44%
Surface Roughness Parameters
33%
PMOSFET
11%
Threshold Voltage
11%
Surface Orientation
11%
Hole Mobility
11%
Root Mean Square
11%
Low Mobility
11%
Si Surface
11%
Autocorrelation Length
11%
Function Design
11%
Second-order Approximation
11%
Gate Work Function
11%
Ultrathin Si
11%
Active Layer Thickness
11%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Modeling Study
100%
Roughness Parameter
60%
Energy Engineering
20%
Experimental Result
20%
Layer Thickness
20%
Simple Model
20%
Length (L)
20%
Induced Roughness
20%
Si Surface
20%
Root Mean Square
20%
Autocorrelation Length
20%
Design Function
20%
Si Device
20%
Ge Device
20%
Yield Surface
20%
Active Layer
20%
Approximation Order
20%
Physics
Field Effect Transistor
100%
Surface Roughness
100%
Yield Surface
8%
Work Function
8%
Threshold Voltage
8%
Autocorrelation
8%
Earth and Planetary Sciences
Surface Roughness
100%
Autocorrelation
8%
Hole Mobility
8%
Threshold Voltage
8%
Work Function
8%
Active Layer
8%