Modeling study of InSb thin film for advanced III-V MOSFET applications

Z. G. Zhu, Tony Low, M. F. Li, W. J. Fan, P. Bai, D. L. Kwong, G. Samudra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


Band structure of III-V material InSb thin films is calculated using empirical pseudopotential method (EPM). Contrary to the predictions by simple effective mass methods, our calculation predicts that the Γ valley (with the smallest isotropic bulk effective mass) in InSb remains the lowest lying conduction valley despite size quantization effects in the presence of competing L and Δ valleys which have larger quantization mass. Based on EPM, we computed the important electronic parameters (effective mass, valley minima) of InSb thin film as a function of film thicknesses. Our calculations reveal that the 'effective mass ' of Γ valley electrons increases with the scaling down of film thickness. We then studied the transport of InSb thin film using Non-Equilibrium Green's Function. The calculation reveals that InSb is comparable but not superior to Si as channel material of ultra-thin body double gate n-MOSFET in the ballistic limit of these devices.

Original languageEnglish (US)
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
StatePublished - 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: Dec 10 2006Dec 13 2006

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Other2006 International Electron Devices Meeting, IEDM
Country/TerritoryUnited States
CitySan Francisco, CA


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