@inproceedings{ca40ac8fee3f45fba86d7d36a5c36ce3,
title = "Modeling study of InSb thin film for advanced III-V MOSFET applications",
abstract = "Band structure of III-V material InSb thin films is calculated using empirical pseudopotential method (EPM). Contrary to the predictions by simple effective mass methods, our calculation predicts that the Γ valley (with the smallest isotropic bulk effective mass) in InSb remains the lowest lying conduction valley despite size quantization effects in the presence of competing L and Δ valleys which have larger quantization mass. Based on EPM, we computed the important electronic parameters (effective mass, valley minima) of InSb thin film as a function of film thicknesses. Our calculations reveal that the 'effective mass ' of Γ valley electrons increases with the scaling down of film thickness. We then studied the transport of InSb thin film using Non-Equilibrium Green's Function. The calculation reveals that InSb is comparable but not superior to Si as channel material of ultra-thin body double gate n-MOSFET in the ballistic limit of these devices.",
author = "Zhu, {Z. G.} and Tony Low and Li, {M. F.} and Fan, {W. J.} and P. Bai and Kwong, {D. L.} and G. Samudra",
year = "2006",
doi = "10.1109/IEDM.2006.346736",
language = "English (US)",
isbn = "1424404398",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",
note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",
}