TY - GEN
T1 - Modeling of spin injection and spin transport properties in organic and inorganic semiconductors
AU - Ruden, P. P.
AU - Albrecht, J. D.
AU - Smith, D. L.
PY - 2005
Y1 - 2005
N2 - Spin polarized charge carrier injection and transport in non-magnetic semiconductors is a key enabling mechanism for spin based electronic data processing. We present theoretical models to describe spin injection and spin transport in structures consisting of a ferromagnetic metal injector, a thin semiconductor layer, and a ferromagnetic metal collector. The semiconductors considered are conjugated polymers (e.g. PPV), small-molecule organic molecular crystals (e.g. pentacene), and inorganic semiconductors (e.g. silicon). In thermal equilibrium the charge carriers in these semiconductors are not spin polarized. Efficient spin injection requires that the semiconductor be driven far out of local thermal equilibrium. Since carrier mobilities (and other relevant parameters) in polymers, organic molecular crystals, and inorganic semiconductors differ by many orders of magnitude, their charge carrier injection characteristics differ significantly.
AB - Spin polarized charge carrier injection and transport in non-magnetic semiconductors is a key enabling mechanism for spin based electronic data processing. We present theoretical models to describe spin injection and spin transport in structures consisting of a ferromagnetic metal injector, a thin semiconductor layer, and a ferromagnetic metal collector. The semiconductors considered are conjugated polymers (e.g. PPV), small-molecule organic molecular crystals (e.g. pentacene), and inorganic semiconductors (e.g. silicon). In thermal equilibrium the charge carriers in these semiconductors are not spin polarized. Efficient spin injection requires that the semiconductor be driven far out of local thermal equilibrium. Since carrier mobilities (and other relevant parameters) in polymers, organic molecular crystals, and inorganic semiconductors differ by many orders of magnitude, their charge carrier injection characteristics differ significantly.
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U2 - 10.1557/proc-871-i1.6
DO - 10.1557/proc-871-i1.6
M3 - Conference contribution
AN - SCOPUS:34249934466
SN - 155899825X
SN - 9781558998254
T3 - Materials Research Society Symposium Proceedings
SP - 12
EP - 17
BT - Organic Thin-Film Electronics
PB - Materials Research Society
T2 - 2005 MRS Spring Meeting
Y2 - 28 March 2005 through 1 April 2005
ER -