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Modeling of semiconductor-electrolyte interfaces with tight-binding molecular dynamics
P. K. Schelling,
J. W. Halley
Physics and Astronomy (Twin Cities)
Research output
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peer-review
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Keyphrases
First-principles
100%
Tight-binding Molecular Dynamics
100%
Semiconductor-electrolyte Interface
100%
Surface Structure
50%
Electron Transfer
50%
Number of Atoms
50%
Computational Cost
50%
Defected Ground Structure
50%
Electrode-electrolyte Interface
50%
Density Functional Tight Binding
50%
Tight-binding Model
50%
Bulk Oxides
50%
Metal-oxide Interface
50%
Atomic Dynamics
50%
Ion Transfer
50%
Electronic Dynamics
50%
Material Science
Electron Transfer
100%
Surface Structure
100%
Oxide Compound
100%
Metal-Oxide Interface
100%
Crystal Defect
100%
Physics
Molecular Dynamics
100%
First Principle
100%
Metal-Oxide Interface
50%
Crystal Defect
50%