Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer

ChengLin Zheng; S. Riki Banerjee; Rhonda F. Drayton

doi:10.1109/SMIC.2005.1587914

Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer

ChengLin Zheng
, S. Riki Banerjee
, Rhonda F. Drayton

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

An irregular non-planar transition effect, that connects a 50Ω microstrip to a 16Ω partially shielded valley microstrip, is studied. The transition effect is modeled using LCT-network and distributed transmission line methods. The circuit model results show agreement with full-wave simulation and measurement data up to approximately 32GHz.

Original language	English (US)
Title of host publication	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Pages	89-92
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2005.1587914
State	Published - 2006
Event	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States Duration: Jan 18 2006 → Jan 20 2006

Publication series

Name	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Volume	2006

Conference

Conference	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Country/Territory	United States
City	San Diego, CA
Period	1/18/06 → 1/20/06

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

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10.1109/SMIC.2005.1587914

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Zheng, C., Riki Banerjee, S., & Drayton, R. F. (2006). Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer. In 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers (pp. 89-92). Article 1587914 (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers; Vol. 2006). https://doi.org/10.1109/SMIC.2005.1587914

Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer. / Zheng, ChengLin; Riki Banerjee, S.; Drayton, Rhonda F.
2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers. 2006. p. 89-92 1587914 (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zheng, C, Riki Banerjee, S & Drayton, RF 2006, Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer. in 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers., 1587914, 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers, vol. 2006, pp. 89-92, 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, CA, United States, 1/18/06. https://doi.org/10.1109/SMIC.2005.1587914

Zheng C, Riki Banerjee S, Drayton RF. Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer. In 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers. 2006. p. 89-92. 1587914. (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers). doi: 10.1109/SMIC.2005.1587914

Zheng, ChengLin ; Riki Banerjee, S. ; Drayton, Rhonda F. / Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers. 2006. pp. 89-92 (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers).

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abstract = "An irregular non-planar transition effect, that connects a 50Ω microstrip to a 16Ω partially shielded valley microstrip, is studied. The transition effect is modeled using LCT-network and distributed transmission line methods. The circuit model results show agreement with full-wave simulation and measurement data up to approximately 32GHz.",

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Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer

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