TY - GEN
T1 - Modeling of irregular non-planar transition effects formed by bulk micromachining on high resistivity silicon wafer
AU - Zheng, ChengLin
AU - Riki Banerjee, S.
AU - Drayton, Rhonda F.
PY - 2006
Y1 - 2006
N2 - An irregular non-planar transition effect, that connects a 50Ω microstrip to a 16Ω partially shielded valley microstrip, is studied. The transition effect is modeled using LCT-network and distributed transmission line methods. The circuit model results show agreement with full-wave simulation and measurement data up to approximately 32GHz.
AB - An irregular non-planar transition effect, that connects a 50Ω microstrip to a 16Ω partially shielded valley microstrip, is studied. The transition effect is modeled using LCT-network and distributed transmission line methods. The circuit model results show agreement with full-wave simulation and measurement data up to approximately 32GHz.
UR - http://www.scopus.com/inward/record.url?scp=33847022705&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847022705&partnerID=8YFLogxK
U2 - 10.1109/SMIC.2005.1587914
DO - 10.1109/SMIC.2005.1587914
M3 - Conference contribution
AN - SCOPUS:33847022705
SN - 0780394720
SN - 9780780394728
T3 - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
SP - 89
EP - 92
BT - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
T2 - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Y2 - 18 January 2006 through 20 January 2006
ER -
