Modeling Of Ge—Si Heterojunction Bipolar Transistors For Use In Silicon Monolithic Millimeter-Wave Integrated Circuits

Stephen A. Campbell, Anand Gopinath

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Previous work on high-resistivity silicon suggests that microstrip line dielectric losses cease to be significant above 30 GHz. Silicon—Germanium heterojunction bipolar transistors now provide a well-behaved three-terminal device capable of operating at microwave frequencies, making the fabrication of silicon monolithic millimeter-wave integrated circuits a genuine possibility. The trade-offs available to operate this device at millimeter-wave frequencies are discussed, and one-dimensional calculations along with two-dimensional simulations of transistor performance are presented.

Original languageEnglish (US)
Pages (from-to)2046-2050
Number of pages5
JournalIEEE Transactions on Microwave Theory and Techniques
Volume37
Issue number12
DOIs
StatePublished - Dec 1989

Bibliographical note

Funding Information:
Manuscript received March 27, 1989; revised July 12, 1989. This work was supported by the National Science Foundation under Grant ECS- 8706913 and by the Graduate School of the University of Minnesota. The authors are with the Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455. IEEE Log Number 8930957.

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