Previous work on high-resistivity silicon suggests that microstrip line dielectric losses cease to be significant above 30 GHz. Silicon—Germanium heterojunction bipolar transistors now provide a well-behaved three-terminal device capable of operating at microwave frequencies, making the fabrication of silicon monolithic millimeter-wave integrated circuits a genuine possibility. The trade-offs available to operate this device at millimeter-wave frequencies are discussed, and one-dimensional calculations along with two-dimensional simulations of transistor performance are presented.
|Original language||English (US)|
|Number of pages||5|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|State||Published - Dec 1989|
Bibliographical noteFunding Information:
Manuscript received March 27, 1989; revised July 12, 1989. This work was supported by the National Science Foundation under Grant ECS- 8706913 and by the Graduate School of the University of Minnesota. The authors are with the Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455. IEEE Log Number 8930957.