Modeling Of Ge—Si Heterojunction Bipolar Transistors For Use In Silicon Monolithic Millimeter-Wave Integrated Circuits

Stephen A. Campbell; Anand Gopinath

doi:10.1109/22.44120

Modeling Of Ge—Si Heterojunction Bipolar Transistors For Use In Silicon Monolithic Millimeter-Wave Integrated Circuits

Stephen A. Campbell, Anand Gopinath

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Previous work on high-resistivity silicon suggests that microstrip line dielectric losses cease to be significant above 30 GHz. Silicon—Germanium heterojunction bipolar transistors now provide a well-behaved three-terminal device capable of operating at microwave frequencies, making the fabrication of silicon monolithic millimeter-wave integrated circuits a genuine possibility. The trade-offs available to operate this device at millimeter-wave frequencies are discussed, and one-dimensional calculations along with two-dimensional simulations of transistor performance are presented.

Original language	English (US)
Pages (from-to)	2046-2050
Number of pages	5
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	37
Issue number	12
DOIs	https://doi.org/10.1109/22.44120
State	Published - Dec 1989

Bibliographical note

Funding Information:
Manuscript received March 27, 1989; revised July 12, 1989. This work was supported by the National Science Foundation under Grant ECS- 8706913 and by the Graduate School of the University of Minnesota. The authors are with the Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455. IEEE Log Number 8930957.

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abstract = "Previous work on high-resistivity silicon suggests that microstrip line dielectric losses cease to be significant above 30 GHz. Silicon—Germanium heterojunction bipolar transistors now provide a well-behaved three-terminal device capable of operating at microwave frequencies, making the fabrication of silicon monolithic millimeter-wave integrated circuits a genuine possibility. The trade-offs available to operate this device at millimeter-wave frequencies are discussed, and one-dimensional calculations along with two-dimensional simulations of transistor performance are presented.",

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note = "Funding Information: Manuscript received March 27, 1989; revised July 12, 1989. This work was supported by the National Science Foundation under Grant ECS- 8706913 and by the Graduate School of the University of Minnesota. The authors are with the Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455. IEEE Log Number 8930957.",

year = "1989",

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N2 - Previous work on high-resistivity silicon suggests that microstrip line dielectric losses cease to be significant above 30 GHz. Silicon—Germanium heterojunction bipolar transistors now provide a well-behaved three-terminal device capable of operating at microwave frequencies, making the fabrication of silicon monolithic millimeter-wave integrated circuits a genuine possibility. The trade-offs available to operate this device at millimeter-wave frequencies are discussed, and one-dimensional calculations along with two-dimensional simulations of transistor performance are presented.

AB - Previous work on high-resistivity silicon suggests that microstrip line dielectric losses cease to be significant above 30 GHz. Silicon—Germanium heterojunction bipolar transistors now provide a well-behaved three-terminal device capable of operating at microwave frequencies, making the fabrication of silicon monolithic millimeter-wave integrated circuits a genuine possibility. The trade-offs available to operate this device at millimeter-wave frequencies are discussed, and one-dimensional calculations along with two-dimensional simulations of transistor performance are presented.

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Modeling Of Ge—Si Heterojunction Bipolar Transistors For Use In Silicon Monolithic Millimeter-Wave Integrated Circuits

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