Abstract
a detailed silicon oxide clustering mechanism in low-pressure silane-oxygen-argon plasmas was developed. An inductively coupled plasma reactor was modeled by constructing a set of one-dimensional conservation equations for mass, momentum, and energy within a multicomponent two-temperature framework. As such, the primary pathways and major contributing processes to clustering were identified.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 251-264 |
| Number of pages | 14 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 21 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2003 |
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