Abstract
a detailed silicon oxide clustering mechanism in low-pressure silane-oxygen-argon plasmas was developed. An inductively coupled plasma reactor was modeled by constructing a set of one-dimensional conservation equations for mass, momentum, and energy within a multicomponent two-temperature framework. As such, the primary pathways and major contributing processes to clustering were identified.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 251-264 |
| Number of pages | 14 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 21 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1 2003 |
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Suh, S. M., Girshick, S. L., Kortshagen, U. R., & Zachariah, M. R. (2003). Modeling gas-phase nucleation in inductively coupled silane-oxygen plasmas. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 21(1), 251-264. https://doi.org/10.1116/1.1531143