Modeling approaches for band-structure calculation in III-V FET quantum wells

E. Caruso, G. Zerveas, G. Baccarani, L. Czornomaz, N. Daix, D. Esseni, E. Gnani, A. Gnudi, R. Grassi, M. Luisier, T. Markussen, P. Palestri, A. Schenk, L. Selmi, M. Sousa, K. Stokbro, M. Visciarelli

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k·p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.

Original languageEnglish (US)
Title of host publicationEUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages101-104
Number of pages4
ISBN (Electronic)9781479969111
DOIs
StatePublished - Mar 18 2015
Event2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy
Duration: Jan 26 2015Jan 28 2015

Publication series

NameEUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Other

Other2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
CountryItaly
CityBologna
Period1/26/151/28/15

Keywords

  • DFT
  • III-V compounds
  • band-structure

Fingerprint Dive into the research topics of 'Modeling approaches for band-structure calculation in III-V FET quantum wells'. Together they form a unique fingerprint.

Cite this