Modeling approaches for band-structure calculation in III-V FET quantum wells

E. Caruso; G. Zerveas; G. Baccarani; L. Czornomaz; N. Daix; D. Esseni; E. Gnani; A. Gnudi; R. Grassi; M. Luisier; T. Markussen; P. Palestri; A. Schenk; L. Selmi; M. Sousa; K. Stokbro; M. Visciarelli

doi:10.1109/ULIS.2015.7063783

Modeling approaches for band-structure calculation in III-V FET quantum wells

E. Caruso, G. Zerveas, G. Baccarani, L. Czornomaz, N. Daix, D. Esseni, E. Gnani, A. Gnudi, R. Grassi, M. Luisier, T. Markussen, P. Palestri, A. Schenk, L. Selmi, M. Sousa, K. Stokbro, M. Visciarelli

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k·p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.

Original language	English (US)
Title of host publication	EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	101-104
Number of pages	4
ISBN (Electronic)	9781479969111
DOIs	https://doi.org/10.1109/ULIS.2015.7063783
State	Published - Mar 18 2015
Event	2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy Duration: Jan 26 2015 → Jan 28 2015

Publication series

Name	EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Other

Other	2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
Country	Italy
City	Bologna
Period	1/26/15 → 1/28/15

Keywords

DFT
III-V compounds
band-structure

Access

10.1109/ULIS.2015.7063783

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Caruso, E., Zerveas, G., Baccarani, G., Czornomaz, L., Daix, N., Esseni, D., Gnani, E., Gnudi, A., Grassi, R., Luisier, M., Markussen, T., Palestri, P., Schenk, A., Selmi, L., Sousa, M., Stokbro, K., & Visciarelli, M. (2015). Modeling approaches for band-structure calculation in III-V FET quantum wells. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (pp. 101-104). [7063783] (EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULIS.2015.7063783

Modeling approaches for band-structure calculation in III-V FET quantum wells. / Caruso, E.; Zerveas, G.; Baccarani, G.; Czornomaz, L.; Daix, N.; Esseni, D.; Gnani, E.; Gnudi, A.; Grassi, R.; Luisier, M.; Markussen, T.; Palestri, P.; Schenk, A.; Selmi, L.; Sousa, M.; Stokbro, K.; Visciarelli, M.

EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. p. 101-104 7063783 (EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Caruso, E, Zerveas, G, Baccarani, G, Czornomaz, L, Daix, N, Esseni, D, Gnani, E, Gnudi, A, Grassi, R, Luisier, M, Markussen, T, Palestri, P, Schenk, A, Selmi, L, Sousa, M, Stokbro, K & Visciarelli, M 2015, Modeling approaches for band-structure calculation in III-V FET quantum wells. in EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon., 7063783, EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., pp. 101-104, 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, Bologna, Italy, 1/26/15. https://doi.org/10.1109/ULIS.2015.7063783

Caruso E, Zerveas G, Baccarani G, Czornomaz L, Daix N, Esseni D et al. Modeling approaches for band-structure calculation in III-V FET quantum wells. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc. 2015. p. 101-104. 7063783. (EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon). https://doi.org/10.1109/ULIS.2015.7063783

Caruso, E. ; Zerveas, G. ; Baccarani, G. ; Czornomaz, L. ; Daix, N. ; Esseni, D. ; Gnani, E. ; Gnudi, A. ; Grassi, R. ; Luisier, M. ; Markussen, T. ; Palestri, P. ; Schenk, A. ; Selmi, L. ; Sousa, M. ; Stokbro, K. ; Visciarelli, M. / Modeling approaches for band-structure calculation in III-V FET quantum wells. EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 101-104 (EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon).

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abstract = "We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k·p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.",

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AU - Zerveas, G.

AU - Baccarani, G.

AU - Czornomaz, L.

AU - Daix, N.

AU - Esseni, D.

AU - Gnani, E.

AU - Gnudi, A.

AU - Grassi, R.

AU - Luisier, M.

AU - Markussen, T.

AU - Palestri, P.

AU - Schenk, A.

AU - Selmi, L.

AU - Sousa, M.

AU - Stokbro, K.

AU - Visciarelli, M.

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