Modeling and analysis of the nonrectangular gate effect for postlithography circuit simulation

Keyphrases

• Circuit Simulation 100%
• Non-rectangular Gate 100%
• Gating Effect 100%
• I-V Characteristics 75%
• Gate Profile 50%
• Transistor 25%
• Spices 25%
• Nanoscale CMOS 25%
• Analytical Approach 25%
• Bias Voltage 25%
• Drain Bias 25%
• Gate Length 25%
• Low Spatial Frequency 25%
• Transient Analysis 25%
• CMOS Devices 25%
• Subthreshold Region 25%
• 65 Nm Technology 25%
• Operation Region 25%
• Transistor Model 25%
• TCAD Simulation 25%
• Gate Geometry 25%
• Sub-wavelength Lithography 25%
• Narrow-width Effect 25%
• Bias Conditions 25%
• Gate Bias Voltage 25%

Engineering

• Circuit Simulation 100%
• Current-Voltage Characteristic 100%
• Bias Voltage 66%
• Transient Analysis 33%
• Simulation Tool 33%
• Simulation Result 33%
• Drain Bias 33%
• Gate Length 33%
• Analytical Approach 33%
• Gate Bias 33%
• Lithography 33%
• Spatial Frequency 33%
• Narrow Width 33%
• SPICE 33%
• Severe Impact 33%
• Nanoscale 33%

Material Science

• Electronic Circuit 100%
• Current-Voltage Characteristic 100%
• Transistor 66%
• Lithography 33%