Abstract
We present a theoretical model to describe electrical spin injection from a ferromagnetic metal contact into a conjugated organic semiconductor. To achieve significant spin current, the organic semiconductor must be driven far out of local thermal equilibrium by an electric current. Effective spin injection therefore requires that equilibration between the conjugated organic semiconductor and the metallic contact be suppressed by an energy barrier to injection that may be due either to a large Schottky barrier or to an insulating tunnel barrier. The results are compared with simulations for a silicon based device structure. Detection of the injected spin current in the organic semiconductor is also addressed.
| Original language | English (US) |
|---|---|
| Title of host publication | Semiconductor Spintronics |
| Pages | 19-24 |
| Number of pages | 6 |
| Volume | 825 |
| State | Published - Dec 1 2004 |
| Event | 2004 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 12 2004 → Apr 16 2004 |
Other
| Other | 2004 MRS Spring Meeting |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 4/12/04 → 4/16/04 |