Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs

Stephen W. Bedell, Amlan Majumdar, John A. Ott, John Arnold, Keith Fogel, Steven J. Koester, Devendra K. Sadana

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs.

Original languageEnglish (US)
Pages (from-to)811-813
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number7
DOIs
StatePublished - Jul 1 2008

Keywords

  • Germanium
  • MOSFET
  • Silicon-germanium-on-insulator (SGOI)
  • Strain

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