Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO₃

Keyphrases

• Epitaxial 100%
• Electron Density 100%
• BaSnO3 100%
• Oxygen Vacancy Doping 100%
• Room Temperature 66%
• Variable Temperature 33%
• Strong Localization 33%
• Resistivity 33%
• Wide Bandgap 33%
• Dopant 33%
• Epitaxial Film 33%
• Vacuum Annealing 33%
• Transport Studies 33%
• Perovskite Oxide Heterostructures 33%
• Localization Transition 33%
• Fold Increase 33%
• Scattering Mechanism 33%

Material Science

• Carrier Concentration 100%
• Oxygen Vacancy 100%
• Heterojunction 50%
• Film 50%
• Annealing 50%
• Electrical Resistivity 50%
• Doping (Additives) 50%
• Oxide Compound 50%
• Epitaxial Film 50%

Engineering

• Room Temperature 100%
• Oxygen Vacancy 100%
• Carrier Concentration 100%
• Heterostructures 50%
• Fold Increase 50%
• Dopants 50%
• Band Gap 50%
• Epitaxial Film 50%