Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3

Koustav Ganguly, Abhinav Prakash, Bharat Jalan, C. Leighton

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The recently discovered high room temperature mobility in wide band gap semiconducting BaSnO3 is of exceptional interest for perovskite oxide heterostructures. Critical open issues with epitaxial films include determination of the optimal dopant and understanding the mobility-electron density (μ-n) relation. These are addressed here through a transport study of BaSnO3(001) films with oxygen vacancy doping controlled via variable temperature vacuum annealing. Room temperature n can be tuned from 5 × 1019 cm−3 to as low as 2 × 1017 cm−3, which is shown to drive a weak- to strong-localization transition, a 104-fold increase in resistivity, and a factor of 28 change in μ. The data reveal μ ∝ n0.65 scaling over the entire n range probed, important information for understanding mobility-limiting scattering mechanisms.

Original languageEnglish (US)
Article number056102
JournalAPL Materials
Issue number5
StatePublished - May 1 2017

Bibliographical note

Funding Information:
This work was supported primarily by the NSF through the University of Minnesota MRSEC under No. DMR-1420013. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program. We thank Tianqi Wang for assistance with vacuum annealing and Jong Seok Jeong and Andre Mkhoyan for electron microscopy.

Publisher Copyright:
© 2017 Author(s).

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