Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3

Koustav Ganguly, Abhinav Prakash, Bharat Jalan, C. Leighton

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The recently discovered high room temperature mobility in wide band gap semiconducting BaSnO3 is of exceptional interest for perovskite oxide heterostructures. Critical open issues with epitaxial films include determination of the optimal dopant and understanding the mobility-electron density (μ-n) relation. These are addressed here through a transport study of BaSnO3(001) films with oxygen vacancy doping controlled via variable temperature vacuum annealing. Room temperature n can be tuned from 5 × 1019 cm−3 to as low as 2 × 1017 cm−3, which is shown to drive a weak- to strong-localization transition, a 104-fold increase in resistivity, and a factor of 28 change in μ. The data reveal μ ∝ n0.65 scaling over the entire n range probed, important information for understanding mobility-limiting scattering mechanisms.

Original languageEnglish (US)
Article number056102
JournalAPL Materials
Volume5
Issue number5
DOIs
StatePublished - May 1 2017

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Oxygen vacancies
Carrier concentration
Doping (additives)
Epitaxial films
Perovskite
Temperature
Oxides
Heterojunctions
Energy gap
Vacuum
Scattering
Annealing

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 4

Cite this

Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3. / Ganguly, Koustav; Prakash, Abhinav; Jalan, Bharat; Leighton, C.

In: APL Materials, Vol. 5, No. 5, 056102, 01.05.2017.

Research output: Contribution to journalArticle

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