Mobility and quantum mobility of modern GaAs/AlGaAs heterostructures

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Abstract

In modern GaAs/AlxGa1-xAs heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor δ layers placed on both sides of the well. Each δ layer is located within a narrow GaAs well, flanked by narrow AlAs layers which capture excess electrons from donors. We show that each excess electron is localized in a compact dipole atom with the nearest donor. Nevertheless, excess electrons screen both the remote donors and background impurities. When the fraction of remote donors filled by excess electrons f is small, the remote donor limited quantum mobility grows as f3 and becomes larger than the background impurity limited one at a characteristic value fc. We also calculate both the mobility and the quantum mobility limited by the screened background impurities with concentrations N1 in AlxGa1-xAs and N2 in GaAs, which allows one to estimate N1 and N2 from the measured mobilities. Taken together, our findings should help to identify avenues for further improvement of modern heterostructures.

Original languageEnglish (US)
Article number064604
JournalPhysical Review Materials
Volume2
Issue number6
DOIs
StatePublished - Jun 22 2018

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aluminum gallium arsenides
Heterojunctions
Two dimensional electron gas
Electrons
Impurities
impurities
electrons
Semiconductor quantum wells
electron capture
electron gas
Atoms
gallium arsenide
quantum wells
dipoles
estimates
atoms

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Mobility and quantum mobility of modern GaAs/AlGaAs heterostructures. / Sammon, M.; Zudov, M. A.; Shklovskii, Boris I.

In: Physical Review Materials, Vol. 2, No. 6, 064604, 22.06.2018.

Research output: Contribution to journalArticle

@article{264299ac53644cc9917aa909bcffdb4d,
title = "Mobility and quantum mobility of modern GaAs/AlGaAs heterostructures",
abstract = "In modern GaAs/AlxGa1-xAs heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor δ layers placed on both sides of the well. Each δ layer is located within a narrow GaAs well, flanked by narrow AlAs layers which capture excess electrons from donors. We show that each excess electron is localized in a compact dipole atom with the nearest donor. Nevertheless, excess electrons screen both the remote donors and background impurities. When the fraction of remote donors filled by excess electrons f is small, the remote donor limited quantum mobility grows as f3 and becomes larger than the background impurity limited one at a characteristic value fc. We also calculate both the mobility and the quantum mobility limited by the screened background impurities with concentrations N1 in AlxGa1-xAs and N2 in GaAs, which allows one to estimate N1 and N2 from the measured mobilities. Taken together, our findings should help to identify avenues for further improvement of modern heterostructures.",
author = "M. Sammon and Zudov, {M. A.} and Shklovskii, {Boris I}",
year = "2018",
month = "6",
day = "22",
doi = "10.1103/PhysRevMaterials.2.064604",
language = "English (US)",
volume = "2",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "6",

}

TY - JOUR

T1 - Mobility and quantum mobility of modern GaAs/AlGaAs heterostructures

AU - Sammon, M.

AU - Zudov, M. A.

AU - Shklovskii, Boris I

PY - 2018/6/22

Y1 - 2018/6/22

N2 - In modern GaAs/AlxGa1-xAs heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor δ layers placed on both sides of the well. Each δ layer is located within a narrow GaAs well, flanked by narrow AlAs layers which capture excess electrons from donors. We show that each excess electron is localized in a compact dipole atom with the nearest donor. Nevertheless, excess electrons screen both the remote donors and background impurities. When the fraction of remote donors filled by excess electrons f is small, the remote donor limited quantum mobility grows as f3 and becomes larger than the background impurity limited one at a characteristic value fc. We also calculate both the mobility and the quantum mobility limited by the screened background impurities with concentrations N1 in AlxGa1-xAs and N2 in GaAs, which allows one to estimate N1 and N2 from the measured mobilities. Taken together, our findings should help to identify avenues for further improvement of modern heterostructures.

AB - In modern GaAs/AlxGa1-xAs heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor δ layers placed on both sides of the well. Each δ layer is located within a narrow GaAs well, flanked by narrow AlAs layers which capture excess electrons from donors. We show that each excess electron is localized in a compact dipole atom with the nearest donor. Nevertheless, excess electrons screen both the remote donors and background impurities. When the fraction of remote donors filled by excess electrons f is small, the remote donor limited quantum mobility grows as f3 and becomes larger than the background impurity limited one at a characteristic value fc. We also calculate both the mobility and the quantum mobility limited by the screened background impurities with concentrations N1 in AlxGa1-xAs and N2 in GaAs, which allows one to estimate N1 and N2 from the measured mobilities. Taken together, our findings should help to identify avenues for further improvement of modern heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=85053451882&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053451882&partnerID=8YFLogxK

U2 - 10.1103/PhysRevMaterials.2.064604

DO - 10.1103/PhysRevMaterials.2.064604

M3 - Article

VL - 2

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 6

M1 - 064604

ER -