In this paper, GaN nanoparticles were synthesized from the complex Ga(H2NCONH2)6Cl3 in the flow of NH3 at a mild temperature (350 C). Further purification was performed by the ethanol-thermal method. The ethanol-thermal method also prompted the GaN nanoparticles to grow into an anisotropic morphology. XRD patterns reveal that GaN nanoparticles have crystallized in a hexagonal wurtzite structure. TEM observation shows that the average size of the as-prepared nanoparticles is about 5-10 nm. The photoluminescence spectrum exhibits a broad green emission band with a peak at 510 nm. It can be known from the first-principle theoretic simulation by the TDDFT method that this fluorescence emission band is attributed to the hydride defects of V N-H on the surface of GaN nanoparticles.
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Acknowledgments This work was supported by financial support from the National Natural Science Foundation of China (61008040, 50902022, 21001026, and 51272044), the Major Research Plan of the Natural Science Foundation of China (91022025), the Natural Science Foundation of Fujian Province (2012J01033), and the Talent Foundation of Fuzhou University (XRC-1012).
- Gallium nitride
- Nanoparticle synthesis
- Optical semiconductor material