Mild-temperature synthesis and first-principle fluorescence simulation of GaN nanoparticles

Nai Feng Zhuang, Xing Wang, Fei Fei, Chun Chen Liu, Lin Wei, Yong Fan Zhang, Xiao Lin Hu, Jian Zhong Chen

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In this paper, GaN nanoparticles were synthesized from the complex Ga(H2NCONH2)6Cl3 in the flow of NH3 at a mild temperature (350 C). Further purification was performed by the ethanol-thermal method. The ethanol-thermal method also prompted the GaN nanoparticles to grow into an anisotropic morphology. XRD patterns reveal that GaN nanoparticles have crystallized in a hexagonal wurtzite structure. TEM observation shows that the average size of the as-prepared nanoparticles is about 5-10 nm. The photoluminescence spectrum exhibits a broad green emission band with a peak at 510 nm. It can be known from the first-principle theoretic simulation by the TDDFT method that this fluorescence emission band is attributed to the hydride defects of V N-H on the surface of GaN nanoparticles.

Original languageEnglish (US)
Article number1458
JournalJournal of Nanoparticle Research
Issue number3
StatePublished - Mar 2013

Bibliographical note

Funding Information:
Acknowledgments This work was supported by financial support from the National Natural Science Foundation of China (61008040, 50902022, 21001026, and 51272044), the Major Research Plan of the Natural Science Foundation of China (91022025), the Natural Science Foundation of Fujian Province (2012J01033), and the Talent Foundation of Fuzhou University (XRC-1012).


  • Gallium nitride
  • Nanoparticle synthesis
  • Optical semiconductor material
  • Photoluminescence


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