Mild-temperature synthesis and first-principle fluorescence simulation of GaN nanoparticles

Nai Feng Zhuang, Xing Wang, Fei Fei, Chun Chen Liu, Lin Wei, Yong Fan Zhang, Xiao Lin Hu, Jian Zhong Chen

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Abstract

In this paper, GaN nanoparticles were synthesized from the complex Ga(H2NCONH2)6Cl3 in the flow of NH3 at a mild temperature (350 C). Further purification was performed by the ethanol-thermal method. The ethanol-thermal method also prompted the GaN nanoparticles to grow into an anisotropic morphology. XRD patterns reveal that GaN nanoparticles have crystallized in a hexagonal wurtzite structure. TEM observation shows that the average size of the as-prepared nanoparticles is about 5-10 nm. The photoluminescence spectrum exhibits a broad green emission band with a peak at 510 nm. It can be known from the first-principle theoretic simulation by the TDDFT method that this fluorescence emission band is attributed to the hydride defects of V N-H on the surface of GaN nanoparticles.

Original languageEnglish (US)
Article number1458
JournalJournal of Nanoparticle Research
Volume15
Issue number3
DOIs
StatePublished - Feb 11 2013

Keywords

  • Gallium nitride
  • Nanoparticle synthesis
  • Optical semiconductor material
  • Photoluminescence
  • TDDFT

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    Zhuang, N. F., Wang, X., Fei, F., Liu, C. C., Wei, L., Zhang, Y. F., Hu, X. L., & Chen, J. Z. (2013). Mild-temperature synthesis and first-principle fluorescence simulation of GaN nanoparticles. Journal of Nanoparticle Research, 15(3), [1458]. https://doi.org/10.1007/s11051-013-1458-z