Microwave Frequency Operation of the Heterostructure Hot-Electron Diode

J. Kolodzey, J. Laskar, T. K. Higman, M. A. Emanuel, James J. Coleman, Karl Hess

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We report the first generation of microwave frequencies by the heterostructure hot-electron diode (H2ED). At 77 K, self-oscillations have been produced over a broad frequency range from direct current to 10.5 GHz, limited by the parasitic series resistance and capacitance. Considerations of the bias polarity required to produce oscillations and of their high-frequency response support a model of switching from tunneling to thermionic emission.

Original languageEnglish (US)
Pages (from-to)272-274
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number6
DOIs
StatePublished - 1988

Bibliographical note

Funding Information:
Manuscript received February 5, 1988. This work was supported in part by the National Science Foundation Engineering Research Center for Compound Semiconductor Microelectronics, and the Joint Services Electronics Program. The authors are with the Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, IL 61801. IEEE Log Number 8821310.

Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.

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