Microwave Frequency Operation of the Heterostructure Hot-Electron Diode

J. Kolodzey, J. Laskar, T. K. Higman, M. A. Emanuel, James J. Coleman, Karl Hess

Research output: Contribution to journalArticle

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Abstract

We report the first generation of microwave frequencies by the heterostructure hot-electron diode (H2ED). At 77 K, self-oscillations have been produced over a broad frequency range from direct current to 10.5 GHz, limited by the parasitic series resistance and capacitance. Considerations of the bias polarity required to produce oscillations and of their high-frequency response support a model of switching from tunneling to thermionic emission.

Original languageEnglish (US)
Pages (from-to)272-274
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number6
DOIs
StatePublished - 1988

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    Kolodzey, J., Laskar, J., Higman, T. K., Emanuel, M. A., Coleman, J. J., & Hess, K. (1988). Microwave Frequency Operation of the Heterostructure Hot-Electron Diode. IEEE Electron Device Letters, 9(6), 272-274. https://doi.org/10.1109/55.714